The IXTP170N13X4 is a 135V N-channel enhancement mode power MOSFET in a TO-220 package, designed for high-power switching applications such as switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It has a maximum drain-source voltage of 135V, a continuous drain current of 120A, and a pulsed drain current of 340A. The typical on-state resistance is 6.30mΩ at 25°C and 10V gate drive. The device is avalanche rated, supports a maximum junction temperature of 175°C, and has a thermal resistance from junction to case of 0.31°C/W. It meets RoHS standards and features low package inductance and easy mounting. The case size dimensions and weight of 3g are consistent with the TO-220 form factor.
These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Low on-resistance RDS(ON) and gate charge Qg dv/dt ruggedness Avalanche capability International standard packages
MOSFET 135V/170A Ultra Junction X4-Class Power MOSFET, TO-220
| Littelfuse, Inc. | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTP170N13X4 | IXTP170N13X4 |
| Product Name | 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options | MOSFET |
| Polarity | N-Channel |
