Our new 1700V, 750mOhm Silicon Carbide (SiC) MOSFETs are presented in TO-263-7L package. The separated source pin reduces significantly the parasitic source inductance path to the driver, which helps improve the efficiency in high power applications. The maximum operating junction temperature is 175 °C.These MOSFETs are ideal for high frequency applications in which high efficiency is desired. Optimized for high-frequency, high-efficiency applications Extremely low gate charge and output capacitance Low gate resistance for high-frequency switching Normally-off operations at all temperatures Ultra-low on-resistance Optimized package with separate driver source pin MSL 1 Rated
N-Channel 1700V 5A (Tc) Surface Mount TO-263-7
SIC MOSFET, 1.7KV, 6.4A, TO-263 ROHS COMPLIANT: YES
SICFET N-CH 1700V 6.4A TO263-7L
| Littelfuse, Inc. | DigiKey | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | LSIC1MO170T0750 | 18-LSIC1MO170T0750-ND | 32AJ5977 | LSIC1MO170T0750 |
| Product Name | Enhancement Mode | Single FETs, MOSFETs | Sic Mosfet, 1.7Kv, 6.4A, To-263 Rohs Compliant Littelfuse | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 1700 volts | |||
| IDSS | 4500 milliamps | |||
| TJ | 175 C (347 F) |
