The IXTP3N120 is an N-channel enhancement mode MOSFET designed for high-voltage switching applications such as power supplies, capacitor discharge, and pulse circuits. It is packaged in a TO-220AB case with dimensions of 8.64 to 9.65 mm in length, 9.65 to 10.41 mm in width, and 4.06 to 4.83 mm in height. It has a drain-source breakdown voltage of 1200 V, a continuous drain current of 3 A at 25°C, and a maximum pulsed drain current of 12 A. The on-state resistance is 4.5 Ω at Ig = 10 V and Id = 1.5 A. The device is avalanche rated with an energy rating of 700 mJ and meets UL 94 V-0 flammability standard. Thermal resistance from junction to case is 0.50 °C/W. Operating junction and storage temperatures range from -55°C to 150°C.
The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. Advantages: Easy to mount Space savings High power density International standard packages Fast switching times Avalanche rated Rugged Polysilicon Gate Cell structure Ultra-low RDS(on)
Power Field-Effect Transistor, Product overview: IXTP3N120 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP3N120 can be used for catalog matching and distributor lookup.
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:1.2kV; Continuous Drain Current Id:3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:200W RoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTP3N120 | 278-IXTP3N120 | 58M7663 |
| Product Name | 100V - 1500V N-Channel Standard Power MOSFETs | MOSFET Transistor | Mosfet, N, To-220; Channel Type Ixys Semiconductor |
| Polarity | N-Channel |
