The IXFT170N25X3HV is an N-channel enhancement mode MOSFET in a TO-268HV package, designed for high-frequency switching in power supplies, motor drives, and PFC circuits. It has a 250 V drain-source breakdown voltage and a continuous drain current of 170 A at 25°C, with a pulsed current capability of 400 A. The maximum on-resistance is 7.4 mΩ at VGS = 10 V and ID = 85 A. The device is avalanche rated with an energy rating of 2.3 J and a dv/dt capability of 50 V/ns. Gate-source voltage is rated at ±20 V continuous and ±30 V transient. Junction-to-case thermal resistance is 0.14 °C/W. The intrinsic body diode has a forward voltage of 1.4 V and a repetitive peak current of 680 A. It features low package inductance and is built in an international standard package.
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
MOSFET, N-CH, 250V, 170A, 150DEG C, 890W; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:170A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFT170N25X3HV | 03AH0929 |
| Product Name | 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options | Mosfet, N-Ch, 250V, 170A, 150Deg C, 890W; Channel Type Littelfuse |
| Polarity | N-Channel |
