The IXTR102N65X2 is an N-channel enhancement mode MOSFET rated for 650 V drain-source voltage and 54 A continuous drain current, designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in an ISOPLUS247 case with an isolated mounting tab and measures 5 g in weight. The device features a maximum on-resistance of 33 mΩ at 10 V gate voltage and 51 A drain current, an avalanche energy rating of 3 J, and electrical isolation of 2500 V~. It operates from -55 °C to 150 °C junction temperature and meets avalanche rating requirements with low package inductance and high power density. Thermal resistance from junction to case is 0.38 °C/W and from case to sink is 0.15 °C/W. The part is rated for a maximum lead temperature of 260 °C for 10 seconds during soldering.
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
N-ch X2 Series MOSFET 650V 102A ISO+247
N-ch X2 Series MOSFET 650V 102A ISO+247
N-ch X2 Series MOSFET 650V 102A ISO+247
Power Field-Effect Transistor, Product overview: IXTR102N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTR102N65X2 can be used for catalog matching and distributor lookup.
| Littelfuse, Inc. | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTR102N65X2 | 9171432 | 9171432P | 278-IXTR102N65X2 |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode | MOSFETs | MOSFETs | MOSFET Transistor |
| Polarity | N-Channel | N-Channel |
