The IXFK24N100Q3 is an N-channel enhancement mode MOSFET designed for high-power switching applications, rated at 1000 V drain-to-source voltage and 24 A continuous drain current. It features a TO-264 package with a weight of 10 g and a maximum junction temperature of 150°C. The device has a maximum on-resistance of 440 mΩ at 25°C, a fast intrinsic rectifier with reverse recovery time of 300 ns, and an avalanche energy rating of 2 J. It supports a dv/dt of up to 50 V/ns and complies with RoHS standards. The package offers low intrinsic gate resistance and low inductance for efficient switching performance.
The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device.Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings Low Rdson per silicon area Low Qg and Qgd Excellent dV/dt performance High Speed Switching Fast intrinsic Rectifier Low Intrinsic Gate Resistance High Avalanche Energy Capabilities Excellent Thermal Performance
MOSFET N-Ch 1000V 24A Q3 HiPerFET TO264
MOSFET N-Ch 1000V 24A Q3 HiPerFET TO264
MOSFET N-Ch 1000V 24A Q3 HiPerFET TO264
N-Channel MOSFET, 1000V, 24A, TO-264 Product overview: IXFK24N100Q3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 1000V, 24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1000V, 24A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK24N100Q3 can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 1KV, 24A, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):0.44ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:6.5V; Power Dissipation RoHS Compliant: Yes
| Littelfuse, Inc. | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFK24N100Q3 | 8011405P | 8011405 | 278-IXFK24N100Q3 | 02AC9806 |
| Product Name | 200V - 1100V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | MOSFETs | MOSFETs | N-Channel 1000V 24A MOSFET Transistor | Mosfet, N-Ch, 1Kv, 24A, To-264; Transistor Polarity Ixys Semiconductor |
| Polarity | N-Channel | N-Channel | |||
| Package Type | TO-264 | TO-264 | To-264 | TO-3 | |
| MOSFET Operating Mode | Enhancement |
