Littelfuse, Inc. 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH15N80

Description
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
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Description
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
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Datasheet
Datasheet Summary
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The IXFH15N80 is an N-channel enhancement mode MOSFET designed for high-voltage switching applications such as DC-DC converters, synchronous rectification, and AC motor control. It is packaged in a TO-247 AD case with dimensions of 20.80 to 21.46 mm in length, 15.75 to 16.26 mm in width, and 5.20 to 5.72 mm in lead pitch. It has a drain-source breakdown voltage of 800 V, a continuous drain current of 15 A at 25°C, and a pulsed drain current of 60 A. The on-resistance is 0.60 Ω at 10 V gate-source voltage and 7.5 A drain current. It features an unclamped inductive switching rating of 30 mJ, a maximum junction temperature of 150°C, and a low package inductance. The device incorporates a fast intrinsic rectifier and is rated for avalanche operation.

Datasheet Summary
Powered by GS/AI

The IXFH15N80 is an N-channel enhancement mode MOSFET designed for high-voltage switching applications such as DC-DC converters, synchronous rectification, and AC motor control. It is packaged in a TO-247 AD case with dimensions of 20.80 to 21.46 mm in length, 15.75 to 16.26 mm in width, and 5.20 to 5.72 mm in lead pitch. It has a drain-source breakdown voltage of 800 V, a continuous drain current of 15 A at 25°C, and a pulsed drain current of 60 A. The on-resistance is 0.60 Ω at 10 V gate-source voltage and 7.5 A drain current. It features an unclamped inductive switching rating of 30 mJ, a maximum junction temperature of 150°C, and a low package inductance. The device incorporates a fast intrinsic rectifier and is rated for avalanche operation.

Suppliers

Company
Product
Description
Supplier Links
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH15N80 - Littelfuse, Inc.
Rosemont, IL, United States
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH15N80
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH15N80
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode

The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 15A 800V 0.6ohm MOSFET Transistor
278-IXFH15N80
N-Channel 15A 800V 0.6ohm MOSFET Transistor 278-IXFH15N80
Power Field-Effect Transistor, 15A I(D), 800V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Product overview: IXFH15N80 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 15A, 800V, 0.6ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 15A, 800V, 0.6ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH15N80 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 15A I(D), 800V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Product overview: IXFH15N80 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 15A, 800V, 0.6ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 15A, 800V, 0.6ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH15N80 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet Transistor, N Channel, 15 A, 800 V, 600 Mohm, 10 V, 4.5 V Rohs Compliant Ixys Semiconductor - 38K3168 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 15 A, 800 V, 600 Mohm, 10 V, 4.5 V Rohs Compliant Ixys Semiconductor
38K3168
Mosfet Transistor, N Channel, 15 A, 800 V, 600 Mohm, 10 V, 4.5 V Rohs Compliant Ixys Semiconductor 38K3168
MOSFET Transistor, N Channel, 15 A, 800 V, 600 mohm, 10 V, 4.5 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 15 A, 800 V, 600 mohm, 10 V, 4.5 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH15N80 278-IXFH15N80 38K3168
Product Name 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 15A 800V 0.6ohm MOSFET Transistor Mosfet Transistor, N Channel, 15 A, 800 V, 600 Mohm, 10 V, 4.5 V Rohs Compliant Ixys Semiconductor
Polarity N-Channel N-Channel
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