Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFR44N80P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFR44N80P is an N-channel enhancement mode power MOSFET with a drain-source voltage rating of 800 V and a continuous drain current of 25 A at 25°C, designed for use in DC-DC converters, battery chargers, switched-mode power supplies, and AC motor control. It is packaged in an ISOPLUS247 case with an electrically isolated tab rated for 2500 V isolation. The device features a low on-resistance of 200 mΩ at 10 V gate voltage, a fast intrinsic diode with reverse recovery time of 250 ns, and a thermal resistance from junction to case of 0.42 °C/W. It is avalanche rated with an unclamped inductive switching energy of 80 mJ at 25°C and meets RoHS standards. The operating junction temperature range is -55°C to 150°C.

Datasheet Summary
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The IXFR44N80P is an N-channel enhancement mode power MOSFET with a drain-source voltage rating of 800 V and a continuous drain current of 25 A at 25°C, designed for use in DC-DC converters, battery chargers, switched-mode power supplies, and AC motor control. It is packaged in an ISOPLUS247 case with an electrically isolated tab rated for 2500 V isolation. The device features a low on-resistance of 200 mΩ at 10 V gate voltage, a fast intrinsic diode with reverse recovery time of 250 ns, and a thermal resistance from junction to case of 0.42 °C/W. It is avalanche rated with an unclamped inductive switching energy of 80 mJ at 25°C and meets RoHS standards. The operating junction temperature range is -55°C to 150°C.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFR44N80P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFR44N80P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFR44N80P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
MOSFETs - 194344 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
194344
MOSFETs 194344
MOSFET N-Channel 800V 25A ISOPLUS247

MOSFET N-Channel 800V 25A ISOPLUS247

Supplier's Site
MOSFETs - 194344P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
194344P
MOSFETs 194344P
MOSFET N-Channel 800V 25A ISOPLUS247

MOSFET N-Channel 800V 25A ISOPLUS247

Supplier's Site
MOSFETs - 1684493 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1684493
MOSFETs 1684493
MOSFET N-Channel 800V 25A ISOPLUS247

MOSFET N-Channel 800V 25A ISOPLUS247

Supplier's Site

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd. RS Components, Ltd.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFR44N80P 194344 194344P
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) MOSFETs MOSFETs
Polarity N-Channel N-Channel N-Channel
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