Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
MOSFET, N, SOT-227B; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:200A; Transistor Mounting:Module; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:5V; Power Dissipation:680W; MSL:- RoHS Compliant: Yes
| Littelfuse, Inc. | RS Components, Ltd. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN200N10P | 1258040 | 58M7621 |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | MOSFETs | Mosfet, N, Sot-227B; Channel Type Ixys Semiconductor |
| Polarity | N-Channel | N-Channel | |
| Package Type | SOT-227 | Sot-227b | TO-3 |
| MOSFET Operating Mode | Enhancement |
