The IXFN200N10P is a 100V N-channel Power MOSFET in a miniBLOC (SOT-227) package, designed for high-power switching applications. It handles 200A continuous and 400A pulsed drain current, with a maximum on-resistance of 7.5mΩ at 10V gate drive. The device is avalanche-rated with 4J energy capability and 10V/ns dv/dt tolerance. It includes a fast intrinsic body diode with a 1.5V forward voltage and 0.4μC reverse recovery charge. The aluminum nitride isolated package offers low inductance and a Kelvin source terminal for stable gate control. Thermal resistance is 0.22°C/W from junction to case and 0.05°C/W from case to sink. Power dissipation is 680W at 25°C case temperature. Junction temperature range is -55°C to 175°C. Mounting torque is 1.5Nm for the pad and 1.3Nm for terminals. Weight is 30g.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
Power Field-Effect Transistor, 200A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 Product overview: IXFN200N10P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200A, 100V, 0.0075ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200A, 100V, 0.0075ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN200N10P can be used for catalog matching and distributor lookup.
MOSFET, N, SOT-227B; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:200A; Transistor Mounting:Module; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:5V; Power Dissipation:680W; MSL:- RoHS Compliant: Yes
| Littelfuse, Inc. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN200N10P | 1258040 | 278-IXFN200N10P | 58M7621 |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | MOSFETs | N-Channel 200A 100V 0.0075ohm MOSFET Transistor | Mosfet, N, Sot-227B; Channel Type Ixys Semiconductor |
| Polarity | N-Channel | N-Channel | ||
| Package Type | SOT-227 | Sot-227b | TO-3 | |
| MOSFET Operating Mode | Enhancement |
