The IXTP26P20P is a P-channel enhancement mode MOSFET designed for high-side switching, push-pull amplifiers, DC choppers, and automatic test equipment. It is packaged in a TO-220AB case with dimensions of 8.64-9.65 mm in length and 9.65-10.41 mm in width. The device has a drain-source breakdown voltage of -200 V, continuous drain current of -26 A at 25°C, and a maximum on-state resistance of 170 mΩ at -10 V gate-source voltage. It is avalanche rated with an energy rating of 1.5 J and features a fast intrinsic diode with a reverse recovery charge of 2.2 µC. The thermal resistance from junction to case is 0.42 °C/W. The part meets industry standards for ruggedness and low package inductance, and is designed for high power density and easy mounting. It is rated for junction temperatures from -55 °C to 150 °C and has a transient gate-source voltage limit of ±30 V.
Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching Fast intrinsic diode Rugged PolarP™ process Avalanche rated Low package inductance Dynamic dv/dt rated
P-Channel MOSFET, 200V, 26A, TO-220 Product overview: IXTP26P20P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 200V, 26A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 26A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP26P20P can be used for catalog matching and distributor lookup.
MOSFET, P-CH, 200V, 26A, TO-220AB ROHS COMPLIANT: YES
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTP26P20P | 278-IXTP26P20P | 71AH4583 |
| Product Name | -100V to -600V P-Channel Power MOSFETs | P-Channel 200V 26A TO-220 MOSFET Transistor | Mosfet, P-Ch, 200V, 26A, To-220Ab Rohs Compliant Ixys Semiconductor |
| Polarity | P-Channel |
