The IXFN74N100X is a 1000V N-channel enhancement mode power MOSFET designed for high-power switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a miniBLOC (SOT-227) housing with an isolation voltage of 2500V~, weighs 30 g, and features an avalanche-rated design with a maximum on-resistance of 66 mΩ at 25°C and 37 A drain current. The device supports a continuous drain current of 74 A and a pulsed drain current of 150 A, with a maximum junction temperature of 150°C. It meets RoHS requirements and is rated for continuous gate-source voltage of ±30 V and transient gate-source voltage of ±40 V. The thermal resistance from junction to case is 0.107°C/W. The part is also rated for a maximum dv/dt of 50 V/ns and includes a fast body diode with a reverse recovery charge of 5.7 μC at 37 A and -di/dt of 300 A/μs.
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
MOSFET 1000V/74A Ultra Junction X-Class HiPerFET Power MOSFET, SOT-227
| Littelfuse, Inc. | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN74N100X | IXFN74N100X |
| Product Name | 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options | MOSFET |
| Polarity | N-Channel |
