Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
MOSFET 1000V/74A Ultra Junction X-Class HiPerFET Power MOSFET, SOT-227
| Littelfuse, Inc. | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN74N100X | IXFN74N100X |
| Product Name | 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options | MOSFET |
| Polarity | N-Channel |