The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
MOSFET, N, SOT-227B; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:24A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5.5V; Power Dissipation:600W; MSL:- RoHS Compliant: Yes
| Littelfuse, Inc. | RS Components, Ltd. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN24N100 | 194091 | 14J1684 |
| Product Name | 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | MOSFETs | Mosfet, N, Sot-227B; Channel Type Ixys Semiconductor |
| Polarity | N-Channel | N-Channel | |
| Package Type | SOT-227 | Sot-227b | TO-3 |
| MOSFET Operating Mode | Enhancement |
