The IXFB90N85X is an N-channel enhancement mode power MOSFET for high-voltage switching applications, rated at 850 V drain-source voltage and 90 A continuous drain current. Its maximum on-state resistance is 41 mΩ at 10 V gate voltage and 45 A drain current. The device is avalanche rated with 4 J energy handling and has a fast intrinsic diode with 5.3 μC reverse recovery charge and 1.4 V forward voltage. It is packaged in a PLUS264TM case, weighs 10 g, and has a junction-to-case thermal resistance of 0.07 °C/W. Operating junction temperature ranges from -55 °C to +150 °C. The MOSFET supports a maximum dv/dt of 50 V/ns and gate-source transient voltage of ±40 V. It meets AEC-Q200 standards.
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Ultra junction MOSFET 90A 850V PLUS264
Ultra junction MOSFET 90A 850V PLUS264
| Littelfuse, Inc. | RS Components, Ltd. | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFB90N85X | 1464246 |
| Product Name | 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options | MOSFETs |
| Polarity | N-Channel | N-Channel |
