The IXFN36N100 is an N-channel enhancement mode MOSFET for high-voltage switching applications, packaged in a miniBLOC (SOT-227 B) measuring 31.5-31.88 mm by 7.8-8.2 mm and weighing 30 g. It has a 1000 V drain-source breakdown voltage, a continuous drain current of 36 A at 25°C, and a maximum on-state resistance of 0.24 Ω at 10 V gate voltage. The device supports unclamped inductive switching with 4 J avalanche energy and features a fast intrinsic diode with 180 ns reverse recovery time at 25°C. It includes aluminum nitride isolation, dual-source terminals, and a thermal junction-to-case resistance of 0.18 K/W. The package enables low inductance and reliable operation from -55°C to 150°C, with 2500 V RMS isolation rating and RoHS compliance.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
Trans MOSFET N-CH 1KV 36A 4-Pin SOT-227B Product overview: IXFN36N100 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1KV, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1KV, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN36N100 can be used for catalog matching and distributor lookup.
MOSFET, N, SOT-227B; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:36A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:700W; MSL:- RoHS Compliant: Yes
| Littelfuse, Inc. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN36N100 | 193795 | 278-IXFN36N100 | 14J1688 |
| Product Name | 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | MOSFETs | 1KV 36A MOSFET Transistor | Mosfet, N, Sot-227B; Channel Type Ixys Semiconductor |
| Polarity | N-Channel | N-Channel | ||
| Package Type | SOT-227 | Sot-227b | TO-3 | |
| MOSFET Operating Mode | Enhancement | Enhancement | ||
| Number of units in IC | 1 |
