Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN48N60P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFN48N60P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFN48N60P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN48N60P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
MOSFETs - 194473 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
194473
MOSFETs 194473
MOSFET N-Channel 600V 40A SOT227B

MOSFET N-Channel 600V 40A SOT227B

Supplier's Site
MOSFETs - 194473P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
194473P
MOSFETs 194473P
MOSFET N-Channel 600V 40A SOT227B

MOSFET N-Channel 600V 40A SOT227B

Supplier's Site
MOSFETs - 9200767 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9200767
MOSFETs 9200767
MOSFET N-Channel 600V 40A SOT227B

MOSFET N-Channel 600V 40A SOT227B

Supplier's Site
Singapore
N-Channel 40A 600V 0.14ohm MOSFET Transistor
278-IXFN48N60P
N-Channel 40A 600V 0.14ohm MOSFET Transistor 278-IXFN48N60P
Power Field-Effect Transistor, 40A I(D), 600V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 Product overview: IXFN48N60P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40A, 600V, 0.14ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40A, 600V, 0.14ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN48N60P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 40A I(D), 600V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 Product overview: IXFN48N60P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40A, 600V, 0.14ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40A, 600V, 0.14ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN48N60P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet Module, N-Ch, 600V, 40A, Sot-227B; Transistor Polarity Ixys Semiconductor - 02AC9814 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Module, N-Ch, 600V, 40A, Sot-227B; Transistor Polarity Ixys Semiconductor
02AC9814
Mosfet Module, N-Ch, 600V, 40A, Sot-227B; Transistor Polarity Ixys Semiconductor 02AC9814
MOSFET MODULE, N-CH, 600V, 40A, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power RoHS Compliant: Yes

MOSFET MODULE, N-CH, 600V, 40A, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd. RS Components, Ltd. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN48N60P 194473 194473P 278-IXFN48N60P 02AC9814
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) MOSFETs MOSFETs N-Channel 40A 600V 0.14ohm MOSFET Transistor Mosfet Module, N-Ch, 600V, 40A, Sot-227B; Transistor Polarity Ixys Semiconductor
Polarity N-Channel N-Channel N-Channel
Package Type SOT-227 Sot-227b SOT-227 TO-3
MOSFET Operating Mode Enhancement
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