The IXFH52N30Q is an N-channel enhancement mode Power MOSFET designed for high-power switching applications, featuring a 300 V drain-source breakdown voltage and a continuous drain current of 52 A at 25°C. It is packaged in a TO-247 AD case, with a mounting torque rating of 1.13 Nm and a weight of 6 g. The device has a typical on-resistance of 60 mΩ at 10 V gate voltage, a gate charge of 150 nC, and an avalanche energy rating of 1.5 J. It meets UL 94 V-0 flammability standards and is rated for junction temperatures from -55°C to +150°C. The MOSFET includes a fast intrinsic rectifier and is rated for unclamped inductive switching (UIS).
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
Power Field-Effect Transistor, Product overview: IXFH52N30Q from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH52N30Q can be used for catalog matching and distributor lookup.
MOSFET, N, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:52A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:360W RoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFH52N30Q | 278-IXFH52N30Q | 38K3176 |
| Product Name | 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | MOSFET Transistor | Mosfet, N, To-247; Channel Type Ixys Semiconductor |
| Polarity | N-Channel |
