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Littelfuse, Inc. 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH52N30Q

Description
The Q-Class series devices are popular Power MOSFETs (HiPerFETâ„¢) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Features: International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages: Easy assembly High Power density Space savings
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Suppliers

Company
Product
Description
Supplier Links
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH52N30Q - Littelfuse, Inc.
Chicago, IL, United States
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH52N30Q
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH52N30Q
The Q-Class series devices are popular Power MOSFETs (HiPerFETâ„¢) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Features: International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages: Easy assembly High Power density Space savings

The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Features: International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages: Easy assembly High Power density Space savings

Supplier's Site Datasheet
Mosfet, N, To-247; Channel Type Ixys Semiconductor - 38K3176 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-247; Channel Type Ixys Semiconductor
38K3176
Mosfet, N, To-247; Channel Type Ixys Semiconductor 38K3176
MOSFET, N, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:52A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:360W RoHS Compliant: Yes

MOSFET, N, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:52A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:360W RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH52N30Q 38K3176
Product Name 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) Mosfet, N, To-247; Channel Type Ixys Semiconductor
Polarity N-Channel
V(BR)DSS 300 volts
IDSS 52000 milliamps 52000 milliamps
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