The IXTP36N30P is an N-channel enhancement mode MOSFET in a TO-220 package, rated for 300 V drain-source voltage and 36 A continuous drain current at 25°C. It has a maximum on-resistance of 110 mΩ at 10 V gate-source voltage and 36 A drain current, with a gate threshold voltage range of 3.0 to 5.5 V. The device is avalanche rated with an energy rating of 1.0 J for single-pulse drain-source events and handles unclamped inductive switching. It features low gate charge (70 nC), low package inductance, and a thermal resistance from junction to case of 0.42°C/W. The part meets international standard package requirements and is suitable for high-power density applications with space savings. Operating junction temperature ranges from -55°C to 150°C.
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Product overview: IXTP36N30P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 36A, 300V, 0.11ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 36A, 300V, 0.11ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP36N30P can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 300V, 36A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power RoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTP36N30P | 278-IXTP36N30P | 34AC1888 |
| Product Name | 100V - 1200V N-Channel Standard Power MOSFETs | N-Channel 36A 300V 0.11ohm MOSFET Transistor | Mosfet, N-Ch, 300V, 36A, To-220; Transistor Polarity Ixys Semiconductor |
| Polarity | N-Channel |
