The IXTH62N65X2 is an N-channel enhancement mode MOSFET designed for high-power switching applications such as switch-mode and resonant-mode power supplies, PFC circuits, and motor drives. It is packaged in a TO-247 case with a weight of 6 g and has a drain-source voltage rating of 650 V, a continuous drain current of 62 A at 25°C, and a maximum on-resistance of 50 mΩ at 10 V gate voltage. The device is avalanche rated, features low gate charge and package inductance, and operates with a junction temperature range of -55°C to 150°C. The case is rated for a maximum soldering temperature of 300°C for 10 seconds. It meets international packaging standards and is designed for high power density and easy mounting.
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Power Field-Effect Transistor, Product overview: IXTH62N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH62N65X2 can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 650V, 62A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation RoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTH62N65X2 | 278-IXTH62N65X2 | 02AC9835 |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode | MOSFET Transistor | Mosfet, N-Ch, 650V, 62A, To-247; Transistor Polarity Ixys Semiconductor |
| Polarity | N-Channel |
