Littelfuse, Inc. 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options IXFN90N85X

Description
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Request a Quote Datasheet
Description
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFN90N85X - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFN90N85X
600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options IXFN90N85X
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
MOSFETs - 1464248 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1464248
MOSFETs 1464248
Ultra junction MOSFET 90A 850V SOT227

Ultra junction MOSFET 90A 850V SOT227

Supplier's Site
MOSFETs - 1464386 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1464386
MOSFETs 1464386
Ultra junction MOSFET 90A 850V SOT227

Ultra junction MOSFET 90A 850V SOT227

Supplier's Site
MOSFET Transistor 278-IXFN90N85X
Power Field-Effect Transistor, Product overview: IXFN90N85X from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN90N85X can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXFN90N85X from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN90N85X can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet Module, 850V, 90A, 1.2Kw Rohs Compliant Littelfuse - 29AK0438 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Module, 850V, 90A, 1.2Kw Rohs Compliant Littelfuse
29AK0438
Mosfet Module, 850V, 90A, 1.2Kw Rohs Compliant Littelfuse 29AK0438
MOSFET MODULE, 850V, 90A, 1.2KW ROHS COMPLIANT: YES

MOSFET MODULE, 850V, 90A, 1.2KW ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN90N85X 1464248 278-IXFN90N85X 29AK0438
Product Name 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options MOSFETs MOSFET Transistor Mosfet Module, 850V, 90A, 1.2Kw Rohs Compliant Littelfuse
Polarity N-Channel N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

 - BUK763R4-30,118 - Rochester Electronics
Specs
Polarity N-Channel
Package Type TO-263; TO-263-3
View Details
2 suppliers
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY - ALD110808ASCL - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS 10 volts
View Details
3 suppliers
 - 2EDF7275KXUMA2 - Rochester Electronics
Infineon Technologies AG
Specs
Package Type PG-TFLGA-13
Packing Method Tape Reel; Tape & Reel
View Details
MOSFETs - 1221264 - RS Components, Ltd.
RS Components, Ltd.
Specs
Polarity P-Channel
MOSFET Operating Mode Enhancement
Package Type TO-92; To-92
View Details