The IXFK27N80Q is an N-channel enhancement mode Power MOSFET designed for high-voltage switching applications such as DC-DC converters, battery chargers, and AC motor control. It is packaged in the PLUS 247™ style with a drain tab, measuring 21.34 mm in length and 16.13 mm in width. The device has a drain-source breakdown voltage of 800 V, continuous drain current of 27 A at 25°C, and a maximum pulsed drain current of 108 A. It features a typical on-resistance of 320 mΩ at 10 V gate drive, a gate charge of 170 nC, and an avalanche energy rating of 2.5 J. The MOSFET is avalanche rated for unclamped inductive switching, with a maximum junction temperature of 150°C and a thermal resistance of 0.26 K/W from junction to case. Molding epoxies meet UL 94 V-0 flammability standards.
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
Power Field-Effect Transistor, 27A I(D), 800V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 Product overview: IXFK27N80Q from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 27A, 800V, 0.32ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 27A, 800V, 0.32ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK27N80Q can be used for catalog matching and distributor lookup.
MOSFET N-Channel 800V 27A TO264AA
MOSFET, N-CH, 800V, 27A, TO-264AA; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:27A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFK27N80Q | 278-IXFK27N80Q | 7115382 | 7115382P | 02AC9808 |
| Product Name | 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | N-Channel 27A 800V 0.32ohm MOSFET Transistor | MOSFETs | MOSFETs | Mosfet, N-Ch, 800V, 27A, To-264Aa; Channel Type Ixys Semiconductor |
| Polarity | N-Channel | N-Channel | N-Channel |
