The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
MOSFET N-Channel 800V 27A TO264AA
MOSFET, N-CH, 800V, 27A, TO-264AA; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:27A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
| Littelfuse, Inc. | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFK27N80Q | 7115382 | 7115382P | 02AC9808 |
| Product Name | 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | MOSFETs | MOSFETs | Mosfet, N-Ch, 800V, 27A, To-264Aa; Channel Type Ixys Semiconductor |
| Polarity | N-Channel | N-Channel | N-Channel |
