Littelfuse, Inc. 75V - 600V N-Channel Linear Power MOSFETs with Extended FBSOAs IXTN60N50L2

Description
Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C. Designed for linear operation Guaranteed FBSOA at 75°C Low on-resistances RDS(on) Avalanche rated International standard packages UL 94 V-0 Flammability qualified (molding epoxies)
Description
Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C. Designed for linear operation Guaranteed FBSOA at 75°C Low on-resistances RDS(on) Avalanche rated International standard packages UL 94 V-0 Flammability qualified (molding epoxies)
Datasheet
Datasheet Summary
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The IXTN60N50L2 is an N-channel enhancement mode Power MOSFET designed for linear operation, with an extended forward bias safe operating area (FBSOA) guaranteed at 75°C. It is packaged in a miniBLOC (SOT-227) case, weighing 30 g, and features aluminum nitride isolation. The device has a drain-source breakdown voltage of 500 V, a continuous drain current of 53 A at 25°C, and a maximum pulsed drain current of 150 A. Its on-resistance is 100 mΩ at 10 V gate voltage and 30 A drain current. Thermal resistance from junction to case is 0.17°C/W, and from case to sink is 0.05°C/W. The molding epoxy meets UL 94 V-0 flammability classification. Maximum junction and storage temperatures are both rated from -55°C to 150°C. The device is rated for 2500 V~ RMS and 3000 V~ transient isolation. Mounting torque is 1.5 Nm, and terminal connection torque is 1.3 Nm.

Datasheet Summary
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The IXTN60N50L2 is an N-channel enhancement mode Power MOSFET designed for linear operation, with an extended forward bias safe operating area (FBSOA) guaranteed at 75°C. It is packaged in a miniBLOC (SOT-227) case, weighing 30 g, and features aluminum nitride isolation. The device has a drain-source breakdown voltage of 500 V, a continuous drain current of 53 A at 25°C, and a maximum pulsed drain current of 150 A. Its on-resistance is 100 mΩ at 10 V gate voltage and 30 A drain current. Thermal resistance from junction to case is 0.17°C/W, and from case to sink is 0.05°C/W. The molding epoxy meets UL 94 V-0 flammability classification. Maximum junction and storage temperatures are both rated from -55°C to 150°C. The device is rated for 2500 V~ RMS and 3000 V~ transient isolation. Mounting torque is 1.5 Nm, and terminal connection torque is 1.3 Nm.

Suppliers

Company
Product
Description
Supplier Links
75V - 600V N-Channel Linear Power MOSFETs with Extended FBSOAs - IXTN60N50L2 - Littelfuse, Inc.
Rosemont, IL, United States
75V - 600V N-Channel Linear Power MOSFETs with Extended FBSOAs
IXTN60N50L2
75V - 600V N-Channel Linear Power MOSFETs with Extended FBSOAs IXTN60N50L2
Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C. Designed for linear operation Guaranteed FBSOA at 75°C Low on-resistances RDS(on) Avalanche rated International standard packages UL 94 V-0 Flammability qualified (molding epoxies)

Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C. Designed for linear operation Guaranteed FBSOA at 75°C Low on-resistances RDS(on) Avalanche rated International standard packages UL 94 V-0 Flammability qualified (molding epoxies)

Supplier's Site Datasheet
N Channel Power Mosfet, Linear L2, 500V, 53A, Sot-227B; Transistor Polarity Ixys Semiconductor - 83R9989 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Power Mosfet, Linear L2, 500V, 53A, Sot-227B; Transistor Polarity Ixys Semiconductor
83R9989
N Channel Power Mosfet, Linear L2, 500V, 53A, Sot-227B; Transistor Polarity Ixys Semiconductor 83R9989
N CHANNEL POWER MOSFET, LINEAR L2, 500V, 53A, SOT-227B; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:53A; On Resistance Rds(on):0.1ohm; Transistor Mounting:Module; No. of Pins:4Pins; MSL:-RoHS Compliant: Yes

N CHANNEL POWER MOSFET, LINEAR L2, 500V, 53A, SOT-227B; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:53A; On Resistance Rds(on):0.1ohm; Transistor Mounting:Module; No. of Pins:4Pins; MSL:-RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Power MOSFET
Product Number IXTN60N50L2 83R9989
Product Name 75V - 600V N-Channel Linear Power MOSFETs with Extended FBSOAs N Channel Power Mosfet, Linear L2, 500V, 53A, Sot-227B; Transistor Polarity Ixys Semiconductor
Polarity N-Channel N-Channel
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