Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0160 1200 V come in ratings of 1200 V, 160 mOhm in a TO-247-3L package. Optimized for high frequency, high-efficiency applications Extremely low gate charge and output capacitance Low gate resistance for high-frequency switching Normally-off operation at all temperatures Ultra-low on-resistance
SICFET N-CH 1200V 22A TO247-3
N-Channel 1200V 22A (Tc) 125W (Tc) Through Hole TO-247AD
SICFET N-CH 1200V 20A TO247-3
SICFET N-CH 1200V 22A TO247-3
MOSFET, N-CH, 1200V, 14A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.8V; Power RoHS Compliant: Yes
| Littelfuse, Inc. | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | LSIC1MO120E0160 | LSIC1MO120E0160 | F11005-ND | LSIC1MO120E0160 | 60AC3730 |
| Product Name | Enhancement Mode | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 1200V, 14A, To-247; Transistor Polarity Littelfuse |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 1200 volts | 1200 volts | |||
| IDSS | 27000 milliamps | 22000 milliamps | 22000 milliamps | ||
| TJ | 175 C (347 F) | -55 to 150 C (-67 to 302 F) | |||
| Polarity | N-Channel; N-Channel | N-Channel |
