The IXTK120N65X2 is an N-channel enhancement mode MOSFET designed for high-power switching applications such as switch-mode power supplies, PFC circuits, and motor drives. It is packaged in a TO-264P case with a drain tab, weighing 10 g. The device has a maximum drain-source voltage of 650 V, continuous drain current of 120 A at 25°C, and a drain-source on-resistance of 23 mΩ at 10 V gate voltage. It is avalanche rated with an energy rating of 3.5 J and supports transient gate-source voltages up to ±40 V. Thermal resistance junction-to-case is 0.10 °C/W. The part meets international standard packaging requirements and is qualified for operation from -55 °C to 150 °C junction temperature.
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
N-ch X2 Series MOSFET 650V 120A TO-264P
N-ch X2 Series MOSFET 650V 120A TO-264P
N-ch X2 Series MOSFET 650V 120A TO-264P
| Littelfuse, Inc. | RS Components, Ltd. | RS Components, Ltd. | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTK120N65X2 | 9171441P | 9171441 |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode | MOSFETs | MOSFETs |
| Polarity | N-Channel | N-Channel |
