Littelfuse, Inc. 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFQ60N50P3

Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Datasheet
Datasheet Summary
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The IXFQ60N50P3 is an N-channel enhancement mode power MOSFET in a TO-3P package, designed for high-power switching applications such as switch-mode and resonant-mode power supplies, DC-DC converters, and motor drives. It has a drain-source voltage rating of 500 V, continuous drain current of 60 A at 25°C, and a maximum drain-source on-resistance of 110 mΩ at 10 V gate-source voltage. The device features an avalanche-rated structure, fast intrinsic rectifier, low gate charge, and low package inductance. Its maximum junction temperature is 150°C, with a thermal resistance from junction to case of 0.12 °C/W. The part is compliant with RoHS and is packaged in a TO-3P case weighing 5.5 g.

Datasheet Summary
Powered by GS/AI

The IXFQ60N50P3 is an N-channel enhancement mode power MOSFET in a TO-3P package, designed for high-power switching applications such as switch-mode and resonant-mode power supplies, DC-DC converters, and motor drives. It has a drain-source voltage rating of 500 V, continuous drain current of 60 A at 25°C, and a maximum drain-source on-resistance of 110 mΩ at 10 V gate-source voltage. The device features an avalanche-rated structure, fast intrinsic rectifier, low gate charge, and low package inductance. Its maximum junction temperature is 150°C, with a thermal resistance from junction to case of 0.12 °C/W. The part is compliant with RoHS and is packaged in a TO-3P case weighing 5.5 g.

Suppliers

Company
Product
Description
Supplier Links
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFQ60N50P3 - Littelfuse, Inc.
Rosemont, IL, United States
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFQ60N50P3
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFQ60N50P3
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
MOSFETs - 8024461 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8024461
MOSFETs 8024461
MOSFET Nch 500V 60A Polar3 HiPerFET TO3P

MOSFET Nch 500V 60A Polar3 HiPerFET TO3P

Supplier's Site
MOSFETs - 8024461P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8024461P
MOSFETs 8024461P
MOSFET Nch 500V 60A Polar3 HiPerFET TO3P

MOSFET Nch 500V 60A Polar3 HiPerFET TO3P

Supplier's Site
MOSFETs - 1461755 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1461755
MOSFETs 1461755
MOSFET Nch 500V 60A Polar3 HiPerFET TO3P

MOSFET Nch 500V 60A Polar3 HiPerFET TO3P

Supplier's Site
Mosfet, N-Ch, 500V, 60A, To-3P; Channel Type Littelfuse - 03AH0867 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 60A, To-3P; Channel Type Littelfuse
03AH0867
Mosfet, N-Ch, 500V, 60A, To-3P; Channel Type Littelfuse 03AH0867
MOSFET, N-CH, 500V, 60A, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:60A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Qualification:-RoHS Compliant: Yes

MOSFET, N-CH, 500V, 60A, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:60A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Qualification:-RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd. RS Components, Ltd. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFQ60N50P3 8024461 8024461P 03AH0867
Product Name 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) MOSFETs MOSFETs Mosfet, N-Ch, 500V, 60A, To-3P; Channel Type Littelfuse
Polarity N-Channel N-Channel
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