Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH12N90P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
  • 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH12N90P - Littelfuse, Inc.
    Littelfuse, Inc.
  • N Channel Polar Power Mosfet, Hiperfet, 900V, 12A, To247; Transistor Polarity Ixys Semiconductor - 83R9967 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH12N90P - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH12N90P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH12N90P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 12A 900V 0.9ohm MOSFET Transistor
278-IXFH12N90P
N-Channel 12A 900V 0.9ohm MOSFET Transistor 278-IXFH12N90P
Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 Product overview: IXFH12N90P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12A, 900V, 0.9ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12A, 900V, 0.9ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH12N90P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 Product overview: IXFH12N90P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12A, 900V, 0.9ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12A, 900V, 0.9ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH12N90P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
N Channel Polar Power Mosfet, Hiperfet, 900V, 12A, To247; Transistor Polarity Ixys Semiconductor - 83R9967 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Polar Power Mosfet, Hiperfet, 900V, 12A, To247; Transistor Polarity Ixys Semiconductor
83R9967
N Channel Polar Power Mosfet, Hiperfet, 900V, 12A, To247; Transistor Polarity Ixys Semiconductor 83R9967
N CHANNEL POLAR POWER MOSFET, HiPerFET, 900V, 12A, TO247; Transistor Polarity:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:12A; On Resistance Rds(on):0.9ohm; Transistor Mounting:Through Hole; Product Range:- RoHS Compliant: Yes

N CHANNEL POLAR POWER MOSFET, HiPerFET, 900V, 12A, TO247; Transistor Polarity:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:12A; On Resistance Rds(on):0.9ohm; Transistor Mounting:Through Hole; Product Range:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET
Product Number IXFH12N90P 278-IXFH12N90P 83R9967
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 12A 900V 0.9ohm MOSFET Transistor N Channel Polar Power Mosfet, Hiperfet, 900V, 12A, To247; Transistor Polarity Ixys Semiconductor
Polarity N-Channel N-Channel
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