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Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH12N90P

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100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH12N90P - Littelfuse, Inc.
Chicago, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH12N90P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH12N90P
Polarâ„¢ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Features: International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages: Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Features: International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages: Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications

Supplier's Site Datasheet
N Channel Polar Power Mosfet, Hiperfet, 900V, 12A, To247; Transistor Polarity Ixys Semiconductor - 83R9967 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Polar Power Mosfet, Hiperfet, 900V, 12A, To247; Transistor Polarity Ixys Semiconductor
83R9967
N Channel Polar Power Mosfet, Hiperfet, 900V, 12A, To247; Transistor Polarity Ixys Semiconductor 83R9967
N CHANNEL POLAR POWER MOSFET, HiPerFET, 900V, 12A, TO247; Transistor Polarity:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:12A; On Resistance Rds(on):0.9ohm; Transistor Mounting:Through Hole; Product Range:- RoHS Compliant: Yes

N CHANNEL POLAR POWER MOSFET, HiPerFET, 900V, 12A, TO247; Transistor Polarity:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:12A; On Resistance Rds(on):0.9ohm; Transistor Mounting:Through Hole; Product Range:- RoHS Compliant: Yes

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Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET
Product Number IXFH12N90P 83R9967
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N Channel Polar Power Mosfet, Hiperfet, 900V, 12A, To247; Transistor Polarity Ixys Semiconductor
Polarity N-Channel N-Channel
V(BR)DSS 900 volts
IDSS 12000 milliamps 12000 milliamps
rDS(on) 1 ohms 0.9000 ohms
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