The IXFX100N65X2 is an N-channel enhancement mode MOSFET designed for high-power switching applications such as switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in the PLUS247 format, weighing 6 grams, and rated for a drain-source voltage of 650 V and a continuous drain current of 100 A at 25°C. The device has a maximum on-resistance of 30 mΩ at VGS = 10 V and ID = 50 A, and is avalanche rated with an energy rating of 3.5 J. It features a fast intrinsic diode with a reverse recovery charge of 1.7 μC and a peak repetitive reverse current of 400 A. Thermal resistance from junction to case is 0.12 °C/W. The operating junction temperature ranges from -55 °C to 150 °C.
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Power Field-Effect Transistor, Product overview: IXFX100N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFX100N65X2 can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 650V, 100A, PLUS247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:100A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFX100N65X2 | 278-IXFX100N65X2 | 03AH0971 |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode | MOSFET Transistor | Mosfet, N-Ch, 650V, 100A, Plus247; Channel Type Littelfuse |
| Polarity | N-Channel |
