Littelfuse, Inc. -50V to -200V P-Channel Power MOSFETs IXTP76P10T

Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
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Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
-50V to -200V P-Channel Power MOSFETs - IXTP76P10T - Littelfuse, Inc.
Rosemont, IL, United States
-50V to -200V P-Channel Power MOSFETs
IXTP76P10T
-50V to -200V P-Channel Power MOSFETs IXTP76P10T
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Supplier's Site Datasheet
Singapore
Through-Hole 100V 76A TO-220 MOSFET Transistor
278-IXTP76P10T
Through-Hole 100V 76A TO-220 MOSFET Transistor 278-IXTP76P10T
P-CH MOSFET 100V 76A TO-220 TrenchP Through Hole Product overview: IXTP76P10T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 100V, 76A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 100V, 76A, TO-220, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP76P10T can be used for catalog matching and distributor lookup.

P-CH MOSFET 100V 76A TO-220 TrenchP Through Hole Product overview: IXTP76P10T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 100V, 76A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 100V, 76A, TO-220, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP76P10T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, P-Ch, 100V, 76A, To-220Ab; Channel Type Littelfuse - 03AH1713 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 100V, 76A, To-220Ab; Channel Type Littelfuse
03AH1713
Mosfet, P-Ch, 100V, 76A, To-220Ab; Channel Type Littelfuse 03AH1713
MOSFET, P-CH, 100V, 76A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:76A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, P-CH, 100V, 76A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:76A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTP76P10T 278-IXTP76P10T 03AH1713
Product Name -50V to -200V P-Channel Power MOSFETs Through-Hole 100V 76A TO-220 MOSFET Transistor Mosfet, P-Ch, 100V, 76A, To-220Ab; Channel Type Littelfuse
Polarity P-Channel
Package Type TO-220; TO-220 TO-3; TO-220
MOSFET Operating Mode Enhancement
V(BR)DSS 100 volts
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