Littelfuse, Inc. 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFK240N25X3

Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
  • 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFK240N25X3 - Littelfuse, Inc.
    Littelfuse, Inc.
  • Mosfet, N-Ch, 250V, 240A, 1.25Kw; Channel Type Littelfuse - 03AH0656 - Newark, An Avnet Company
    Newark, An Avnet Company
Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
Datasheet
Datasheet Summary
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The IXFK240N25X3 is an N-channel enhancement mode MOSFET for high-power switching applications, including switch-mode and resonant-mode power supplies and motor drives. It is packaged in a TO-264K case, weighing 10 g, with a maximum junction temperature of 150°C. The device has a drain-source breakdown voltage of 250 V, a continuous drain current of 240 A at 25°C, and a maximum power dissipation of 1250 W. Its on-resistance RDS(on) is 5.0 mΩ maximum at 10 V gate-source voltage. It is avalanche rated with a single-pulse energy rating of 3 J at 25°C. Thermal resistance from junction to case is 0.10 °C/W. The device features a fast intrinsic diode and is rated for dv/dt up to 50 V/ns. It complies with AEC-Q200 and RoHS standards.

Datasheet Summary
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The IXFK240N25X3 is an N-channel enhancement mode MOSFET for high-power switching applications, including switch-mode and resonant-mode power supplies and motor drives. It is packaged in a TO-264K case, weighing 10 g, with a maximum junction temperature of 150°C. The device has a drain-source breakdown voltage of 250 V, a continuous drain current of 240 A at 25°C, and a maximum power dissipation of 1250 W. Its on-resistance RDS(on) is 5.0 mΩ maximum at 10 V gate-source voltage. It is avalanche rated with a single-pulse energy rating of 3 J at 25°C. Thermal resistance from junction to case is 0.10 °C/W. The device features a fast intrinsic diode and is rated for dv/dt up to 50 V/ns. It complies with AEC-Q200 and RoHS standards.

Suppliers

Company
Product
Description
Supplier Links
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFK240N25X3 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFK240N25X3
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFK240N25X3
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Supplier's Site Datasheet
Mosfet, N-Ch, 250V, 240A, 1.25Kw; Channel Type Littelfuse - 03AH0656 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 250V, 240A, 1.25Kw; Channel Type Littelfuse
03AH0656
Mosfet, N-Ch, 250V, 240A, 1.25Kw; Channel Type Littelfuse 03AH0656
MOSFET, N-CH, 250V, 240A, 1.25KW; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:240A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 250V, 240A, 1.25KW; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:240A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFK240N25X3 03AH0656
Product Name 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options Mosfet, N-Ch, 250V, 240A, 1.25Kw; Channel Type Littelfuse
Polarity N-Channel
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