The IXFN180N10 is an N-channel enhancement mode Power MOSFET designed for high-current switching applications such as DC-DC converters, battery chargers, and synchronous rectification. It is packaged in a miniBLOC case with an aluminum nitride substrate, weighing 30 g, and features a low on-resistance of 8 mΩ at 25°C and a continuous drain current of 180 A. The device is avalanche rated, has a fast intrinsic rectifier, and supports a transient gate-source voltage of ±30 V. Maximum junction temperature is 150°C, with a thermal resistance from junction to case of 0.21°C/W. Its isolation voltage is 2500 V~ RMS for one minute. The drain-to-source breakdown voltage is 100 V.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
N CHANNEL MOSFET, 100V, 180A, SOT-227B; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN180N10 | 14J1681 |
| Product Name | 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | N Channel Mosfet, 100V, 180A, Sot-227B; Channel Type Ixys Semiconductor |
| Polarity | N-Channel | N-Channel |
