Littelfuse, Inc. 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN180N10

Description
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
Datasheet
Description
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
Datasheet

Suppliers

Company
Product
Description
Supplier Links
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFN180N10 - Littelfuse, Inc.
Rosemont, IL, United States
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFN180N10
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN180N10
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode

The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode

Supplier's Site Datasheet
N Channel Mosfet, 100V, 180A, Sot-227B; Channel Type Ixys Semiconductor - 14J1681 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 180A, Sot-227B; Channel Type Ixys Semiconductor
14J1681
N Channel Mosfet, 100V, 180A, Sot-227B; Channel Type Ixys Semiconductor 14J1681
N CHANNEL MOSFET, 100V, 180A, SOT-227B; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 180A, SOT-227B; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN180N10 14J1681
Product Name 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N Channel Mosfet, 100V, 180A, Sot-227B; Channel Type Ixys Semiconductor
Polarity N-Channel N-Channel
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