Littelfuse, Inc. 100V - 1700V N-Channel Depletion Mode Power MOSFETs IXTY08N50D2

Description
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
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Description
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
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Datasheet
Datasheet Summary
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The IXTY08N50D2 is a depletion mode N-channel MOSFET designed for normally-on operation in applications such as audio amplifiers, start-up circuits, and protection circuits. It is packaged in a TO-252 (DPAK) case measuring 0.35 g and rated for a maximum drain-source voltage of 500 V and a continuous drain current of 800 mA. The gate-source voltage ranges from -20 V to +20 V, with a transient tolerance of ±30 V. The on-state resistance is 4.6 Ω at 25°C and 400 mA, and the device features a forward-biased body diode with a typical voltage drop of 0.8 V. The molding epoxies meet UL 94 V-0 flammability classification. Thermal resistance from junction to case is 2.08 °C/W. Operating and storage junction temperatures range from -55 °C to 150 °C.

Datasheet Summary
Powered by GS/AI

The IXTY08N50D2 is a depletion mode N-channel MOSFET designed for normally-on operation in applications such as audio amplifiers, start-up circuits, and protection circuits. It is packaged in a TO-252 (DPAK) case measuring 0.35 g and rated for a maximum drain-source voltage of 500 V and a continuous drain current of 800 mA. The gate-source voltage ranges from -20 V to +20 V, with a transient tolerance of ±30 V. The on-state resistance is 4.6 Ω at 25°C and 400 mA, and the device features a forward-biased body diode with a typical voltage drop of 0.8 V. The molding epoxies meet UL 94 V-0 flammability classification. Thermal resistance from junction to case is 2.08 °C/W. Operating and storage junction temperatures range from -55 °C to 150 °C.

Suppliers

Company
Product
Description
Supplier Links
100V - 1700V N-Channel Depletion Mode Power MOSFETs - IXTY08N50D2 - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1700V N-Channel Depletion Mode Power MOSFETs
IXTY08N50D2
100V - 1700V N-Channel Depletion Mode Power MOSFETs IXTY08N50D2
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)

As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 500V 8A MOSFET Transistor
278-IXTY08N50D2
N-Channel 500V 8A MOSFET Transistor 278-IXTY08N50D2
N-Channel MOSFET, 500V, 8A, TO-247 Product overview: IXTY08N50D2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTY08N50D2 can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 500V, 8A, TO-247 Product overview: IXTY08N50D2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTY08N50D2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 500V, 800Ma, 150Deg C, 60W; Channel Type Littelfuse - 03AH1903 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 800Ma, 150Deg C, 60W; Channel Type Littelfuse
03AH1903
Mosfet, N-Ch, 500V, 800Ma, 150Deg C, 60W; Channel Type Littelfuse 03AH1903
MOSFET, N-CH, 500V, 800MA, 150DEG C, 60W; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:800mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 500V, 800MA, 150DEG C, 60W; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:800mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTY08N50D2 278-IXTY08N50D2 03AH1903
Product Name 100V - 1700V N-Channel Depletion Mode Power MOSFETs N-Channel 500V 8A MOSFET Transistor Mosfet, N-Ch, 500V, 800Ma, 150Deg C, 60W; Channel Type Littelfuse
Polarity N-Channel
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