- Trained on our vast library of engineering resources.

Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH26N50P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Features: International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages: Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH26N50P - Littelfuse, Inc.
Chicago, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH26N50P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH26N50P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Features: International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages: Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Features: International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages: Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications

Supplier's Site Datasheet
Triode/MOS Tube/Transistor >> MOSFETs - IXFH26N50P - LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IXFH26N50P
Triode/MOS Tube/Transistor >> MOSFETs IXFH26N50P
500V 26A 230mΩ@13A,10V 400W 5.5V@4mA null TO-247-3 MOSFETs ROHS

500V 26A 230mΩ@13A,10V 400W 5.5V@4mA null TO-247-3 MOSFETs ROHS

Supplier's Site Datasheet
 - 194530 - RS Components, Ltd.
Corby, Northants, United Kingdom
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS Channel Type = N Maximum Continuous Drain Current = 26 A Maximum Drain Source Voltage = 500 V Maximum Drain Source Resistance = 230 mOhms Maximum Gate Threshold Voltage = 5.5V Maximum Gate Source Voltage = -30 V, +30 V Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Transistor Configuration = Single

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFETâ„¢) from IXYS
Channel Type = N
Maximum Continuous Drain Current = 26 A
Maximum Drain Source Voltage = 500 V
Maximum Drain Source Resistance = 230 mOhms
Maximum Gate Threshold Voltage = 5.5V
Maximum Gate Source Voltage = -30 V, +30 V
Package Type = TO-247
Mounting Type = Through Hole
Pin Count = 3
Transistor Configuration = Single

Supplier's Site
 - 9200773 - RS Components, Ltd.
Corby, Northants, United Kingdom
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS Channel Type = N Maximum Continuous Drain Current = 26 A Maximum Drain Source Voltage = 500 V Maximum Drain Source Resistance = 230 mOhms Maximum Gate Threshold Voltage = 5.5V Maximum Gate Source Voltage = -30 V, +30 V Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Transistor Configuration = Single

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFETâ„¢) from IXYS
Channel Type = N
Maximum Continuous Drain Current = 26 A
Maximum Drain Source Voltage = 500 V
Maximum Drain Source Resistance = 230 mOhms
Maximum Gate Threshold Voltage = 5.5V
Maximum Gate Source Voltage = -30 V, +30 V
Package Type = TO-247
Mounting Type = Through Hole
Pin Count = 3
Transistor Configuration = Single

Supplier's Site
 - 194530P - RS Components, Ltd.
Corby, Northants, United Kingdom
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS Channel Type = N Maximum Continuous Drain Current = 26 A Maximum Drain Source Voltage = 500 V Maximum Drain Source Resistance = 230 mOhms Maximum Gate Threshold Voltage = 5.5V Maximum Gate Source Voltage = -30 V, +30 V Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Transistor Configuration = Single Delivery on production packaging - Tube. This product is non-returnable.

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFETâ„¢) from IXYS
Channel Type = N
Maximum Continuous Drain Current = 26 A
Maximum Drain Source Voltage = 500 V
Maximum Drain Source Resistance = 230 mOhms
Maximum Gate Threshold Voltage = 5.5V
Maximum Gate Source Voltage = -30 V, +30 V
Package Type = TO-247
Mounting Type = Through Hole
Pin Count = 3
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
Mosfet, N-Ch, 500V, 26A, To-247 Rohs Compliant Ixys Semiconductor - 71AH4543 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 26A, To-247 Rohs Compliant Ixys Semiconductor
71AH4543
Mosfet, N-Ch, 500V, 26A, To-247 Rohs Compliant Ixys Semiconductor 71AH4543
MOSFET, N-CH, 500V, 26A, TO-247 ROHS COMPLIANT: YES

MOSFET, N-CH, 500V, 26A, TO-247 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Littelfuse, Inc. LCSC Electronics Technology (HK) Limited RS Components, Ltd. Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH26N50P IXFH26N50P 194530 71AH4543
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) Triode/MOS Tube/Transistor >> MOSFETs Mosfet, N-Ch, 500V, 26A, To-247 Rohs Compliant Ixys Semiconductor
Polarity N-Channel N-Channel
V(BR)DSS 500 volts 500 volts 500 volts
IDSS 26000 milliamps
rDS(on) 0.2300 ohms 0.2300 ohms 0.2300 ohms
Unlock Full Specs
to access all available technical data

Similar Products

100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK32N100P - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 1000 volts
IDSS 32000 milliamps
View Details
600V - 700V Power MOSFETs with HiPerFET™ Options - IXFN120N65X2 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 650 volts
IDSS 108000 milliamps
View Details
2 suppliers
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFB60N80P - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 800 volts
IDSS 60000 milliamps
View Details
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFH120N25T - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 250 volts
IDSS 120000 milliamps
View Details