The IXFH26N50P is an N-channel enhancement mode power MOSFET with a fast intrinsic diode, designed for high-power switching. Packaged in a TO-247 case, it measures 20.80-21.46 mm in length and 15.75-16.26 mm in width. It has a drain-source breakdown voltage of 500 V, a continuous drain current of 26 A at 25°C, and a pulsed current rating of 78 A. The on-resistance is 230 mΩ at 10 V gate-source voltage. The gate charge is 60 nC, and the intrinsic diode has a reverse recovery time of 200 ns. It is avalanche-rated with 40 mJ unclamped inductive switching energy. The thermal resistance from junction to case is 0.31 °C/W, and the maximum junction temperature is 150°C.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG andRDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Product overview: IXFH26N50P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 26A, 500V, 0.23ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 26A, 500V, 0.23ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH26N50P can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 500V, 26A, TO-247 ROHS COMPLIANT: YES
500V 26A 230mΩ@13A,10V 400W 5.5V@4mA null TO-247-3 MOSFETs ROHS
| Littelfuse, Inc. | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFH26N50P | 194530 | 194530P | 278-IXFH26N50P | 71AH4543 | IXFH26N50P |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | MOSFETs | MOSFETs | N-Channel 26A 500V 0.23ohm MOSFET Transistor | Mosfet, N-Ch, 500V, 26A, To-247 Rohs Compliant Ixys Semiconductor | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-247; TO-247 | TO-247; To-247 | TO-247; TO-247 | TO-3; TO-247 | TO-247 | |
| MOSFET Operating Mode | Enhancement | |||||
| Number of units in IC | 1 | |||||
| V(BR)DSS | 500 volts |
