Littelfuse, Inc. 24 V Bidirectional 250 W Discrete TVS Diode IXTH48N65X2

Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Request a Quote
Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IXTH48N65X2 is an N-channel enhancement mode Power MOSFET rated for 650 V drain-source voltage and 48 A continuous drain current, designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-247 case and weighs 6 g. The device has a maximum on-resistance of 65 mΩ at 25°C, an avalanche energy rating of 1.5 J, and an operating junction temperature range of -55°C to 150°C. Thermal resistance from junction to case is 0.19 °C/W. The gate-source voltage rating is ±30 V continuous, with a transient withstand of ±40 V. The body diode has a forward voltage of 1.4 V at 24 A. The device features low package inductance and is avalanche-rated.

Datasheet Summary
Powered by GS/AI

The IXTH48N65X2 is an N-channel enhancement mode Power MOSFET rated for 650 V drain-source voltage and 48 A continuous drain current, designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-247 case and weighs 6 g. The device has a maximum on-resistance of 65 mΩ at 25°C, an avalanche energy rating of 1.5 J, and an operating junction temperature range of -55°C to 150°C. Thermal resistance from junction to case is 0.19 °C/W. The gate-source voltage rating is ±30 V continuous, with a transient withstand of ±40 V. The body diode has a forward voltage of 1.4 V at 24 A. The device features low package inductance and is avalanche-rated.

Suppliers

Company
Product
Description
Supplier Links
24 V Bidirectional 250 W Discrete TVS Diode - IXTH48N65X2 - Littelfuse, Inc.
Rosemont, IL, United States
24 V Bidirectional 250 W Discrete TVS Diode
IXTH48N65X2
24 V Bidirectional 250 W Discrete TVS Diode IXTH48N65X2
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXTH48N65X2
MOSFET Transistor 278-IXTH48N65X2
Power Field-Effect Transistor, Product overview: IXTH48N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH48N65X2 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXTH48N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH48N65X2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 9171410 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9171410
MOSFETs 9171410
N-ch X2 Series MOSFET 650V 48A TO-247

N-ch X2 Series MOSFET 650V 48A TO-247

Supplier's Site
MOSFETs - 9171410P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9171410P
MOSFETs 9171410P
N-ch X2 Series MOSFET 650V 48A TO-247

N-ch X2 Series MOSFET 650V 48A TO-247

Supplier's Site
MOSFETs - 1684810 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1684810
MOSFETs 1684810
N-ch X2 Series MOSFET 650V 48A TO-247

N-ch X2 Series MOSFET 650V 48A TO-247

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTH48N65X2 278-IXTH48N65X2 9171410 9171410P
Product Name 24 V Bidirectional 250 W Discrete TVS Diode MOSFET Transistor MOSFETs MOSFETs
Polarity N-Channel N-Channel
Unlock Full Specs
to access all available technical data