Littelfuse, Inc. 24 V Bidirectional 250 W Discrete TVS Diode IXTH48N65X2

Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
24 V Bidirectional 250 W Discrete TVS Diode - IXTH48N65X2 - Littelfuse, Inc.
Rosemont, IL, United States
24 V Bidirectional 250 W Discrete TVS Diode
IXTH48N65X2
24 V Bidirectional 250 W Discrete TVS Diode IXTH48N65X2
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
MOSFETs - 9171410 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9171410
MOSFETs 9171410
N-ch X2 Series MOSFET 650V 48A TO-247

N-ch X2 Series MOSFET 650V 48A TO-247

Supplier's Site
MOSFETs - 9171410P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9171410P
MOSFETs 9171410P
N-ch X2 Series MOSFET 650V 48A TO-247

N-ch X2 Series MOSFET 650V 48A TO-247

Supplier's Site
MOSFETs - 1684810 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1684810
MOSFETs 1684810
N-ch X2 Series MOSFET 650V 48A TO-247

N-ch X2 Series MOSFET 650V 48A TO-247

Supplier's Site

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd. RS Components, Ltd.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTH48N65X2 9171410 9171410P
Product Name 24 V Bidirectional 250 W Discrete TVS Diode MOSFETs MOSFETs
Polarity N-Channel N-Channel
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