The IXTA3N100D2HV is a normally-on, N-channel depletion mode power MOSFET designed for high voltage applications up to 1000 V. It is packaged in a TO-263HV case with a drain tab, weighing 2.5 g. The device has a maximum continuous drain current of 3 A, a drain-source on-resistance of 6 Ω, and a power dissipation rating of 125 W at 25°C. The gate-source voltage ranges from -2.5 V to -4.5 V to turn off the device, and the gate-source transient voltage is rated at ±30 V. Thermal resistance junction-to-case is 1.0 °C/W. The source-drain diode has a forward voltage of 0.8 V to 1.3 V at 3 A. The device is qualified for operation from -55 °C to 150 °C junction temperature.
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
MOSFET, 3A, 1KV, 125W, TO-263-3 ROHS COMPLIANT: YES
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTA3N100D2HV | 29AK0458 |
| Product Name | 100V - 1700V N-Channel Depletion Mode Power MOSFETs | Mosfet, 3A, 1Kv, 125W, To-263-3 Rohs Compliant Littelfuse |
| Polarity | N-Channel |
