The IXTH40N30 is an N-channel enhancement mode MOSFET designed for switch-mode and resonant-mode power supplies, motor controls, uninterruptible power supplies, and DC choppers. It comes in a TO-247 AD package, measuring 21.46 mm in length and 16.26 mm in width. The device has a drain-source breakdown voltage of 300 V, a continuous drain current of 40 A at 25°C, and a maximum pulsed drain current of 160 A. Its on-resistance is 0.085 Ω at 10 V gate-source voltage and 25°C. It features a rugged polysilicon gate structure, low package inductance under 5 nH, and fast switching times. The maximum junction temperature is 150°C, with a thermal resistance from junction to case of 0.25 K/W. It meets international standard package requirements and supports easy mounting with a single isolated screw.
The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. Advantages: Easy to mount Space savings High power density International standard packages Fast switching times Avalanche rated Rugged Polysilicon Gate Cell structure Ultra-low RDS(on)
N CHANNEL MOSFET, 300V, 40A, TO-247AD; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:40A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTH40N30 | 24M3054 |
| Product Name | 100V - 1500V N-Channel Standard Power MOSFETs | N Channel Mosfet, 300V, 40A, To-247Ad; Channel Type Ixys Semiconductor |
| Polarity | N-Channel | N-Channel |
