The IXFN230N10 is a single-die N-channel enhancement mode MOSFET designed for high-power switching applications such as DC-DC converters, battery chargers, and switched-mode power supplies. It is packaged in a miniBLOC (SOT-227 B) with dimensions of 31.50 to 31.88 mm in length and 7.80 to 8.20 mm in width. The device has a drain-source voltage rating of 100 V, a continuous drain current of 200 A, and a pulsed drain current of 920 A. Its on-state resistance is 6.0 mΩ at 25°C with a gate-source voltage of 10 V. The package features aluminum nitride isolation, low inductance, and a guaranteed forward bias safe operating area. The junction temperature range is -55°C to 150°C, with a thermal resistance from junction to case of 0.18 °C/W. The device is avalanche rated and includes a fast intrinsic rectifier diode with a reverse recovery time of 250 ns.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
N CHANNEL MOSFET, 100V, 230A, SOT-227B; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:230A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN230N10 | 69C1144 |
| Product Name | 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | N Channel Mosfet, 100V, 230A, Sot-227B; Channel Type Ixys Semiconductor |
| Polarity | N-Channel | N-Channel |
