Littelfuse, Inc. 75V - 600V N-Channel Linear Power MOSFETs with Extended FBSOAs IXTQ40N50L2

Description
Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C. Designed for linear operation Guaranteed FBSOA at 75°C Low on-resistances RDS(on) Avalanche rated International standard packages UL 94 V-0 Flammability qualified (molding epoxies)
  • 75V - 600V N-Channel Linear Power MOSFETs with Extended FBSOAs - IXTQ40N50L2 - Littelfuse, Inc.
    Littelfuse, Inc.
  • N Channel Power Mosfet, Linear L2, 500V, 40A, To-3P; Transistor Polarity Ixys Semiconductor - 83R9993 - Newark, An Avnet Company
    Newark, An Avnet Company
Description
Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C. Designed for linear operation Guaranteed FBSOA at 75°C Low on-resistances RDS(on) Avalanche rated International standard packages UL 94 V-0 Flammability qualified (molding epoxies)
Datasheet
Datasheet Summary
Powered by GS/AI

The IXTQ40N50L2 is an N-channel enhancement mode MOSFET designed for linear operation with an extended forward bias safe operating area (FBSOA) guaranteed at 75°C. It is packaged in a TO-3P case with a drain tab, measuring 5.5 grams in weight. The device has a maximum drain-source voltage of 500 V, a continuous drain current of 40 A at 25°C, and a maximum RDS(on) of 170 mΩ at 10 V gate voltage. It features avalanche capability, with an energy rating of 2 J at 25°C and a maximum power dissipation of 540 W. Thermal resistance from junction to case is 0.25 °C/W. Molding epoxies meet UL 94 V-0 flammability standards. The device is designed for applications including solid-state circuit breakers, soft start controls, linear amplifiers, and programmable loads.

Datasheet Summary
Powered by GS/AI

The IXTQ40N50L2 is an N-channel enhancement mode MOSFET designed for linear operation with an extended forward bias safe operating area (FBSOA) guaranteed at 75°C. It is packaged in a TO-3P case with a drain tab, measuring 5.5 grams in weight. The device has a maximum drain-source voltage of 500 V, a continuous drain current of 40 A at 25°C, and a maximum RDS(on) of 170 mΩ at 10 V gate voltage. It features avalanche capability, with an energy rating of 2 J at 25°C and a maximum power dissipation of 540 W. Thermal resistance from junction to case is 0.25 °C/W. Molding epoxies meet UL 94 V-0 flammability standards. The device is designed for applications including solid-state circuit breakers, soft start controls, linear amplifiers, and programmable loads.

Suppliers

Company
Product
Description
Supplier Links
75V - 600V N-Channel Linear Power MOSFETs with Extended FBSOAs - IXTQ40N50L2 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
75V - 600V N-Channel Linear Power MOSFETs with Extended FBSOAs
IXTQ40N50L2
75V - 600V N-Channel Linear Power MOSFETs with Extended FBSOAs IXTQ40N50L2
Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C. Designed for linear operation Guaranteed FBSOA at 75°C Low on-resistances RDS(on) Avalanche rated International standard packages UL 94 V-0 Flammability qualified (molding epoxies)

Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C. Designed for linear operation Guaranteed FBSOA at 75°C Low on-resistances RDS(on) Avalanche rated International standard packages UL 94 V-0 Flammability qualified (molding epoxies)

Supplier's Site Datasheet
N Channel Power Mosfet, Linear L2, 500V, 40A, To-3P; Transistor Polarity Ixys Semiconductor - 83R9993 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Power Mosfet, Linear L2, 500V, 40A, To-3P; Transistor Polarity Ixys Semiconductor
83R9993
N Channel Power Mosfet, Linear L2, 500V, 40A, To-3P; Transistor Polarity Ixys Semiconductor 83R9993
N CHANNEL POWER MOSFET, LINEAR L2, 500V, 40A, TO-3P; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:40A; On Resistance Rds(on):0.17ohm; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes

N CHANNEL POWER MOSFET, LINEAR L2, 500V, 40A, TO-3P; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:40A; On Resistance Rds(on):0.17ohm; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Power MOSFET
Product Number IXTQ40N50L2 83R9993
Product Name 75V - 600V N-Channel Linear Power MOSFETs with Extended FBSOAs N Channel Power Mosfet, Linear L2, 500V, 40A, To-3P; Transistor Polarity Ixys Semiconductor
Polarity N-Channel N-Channel
Unlock Full Specs
to access all available technical data