The IXFP16N50P3 is an N-channel power MOSFET in a TO-220 package with a 500 V drain-source breakdown voltage and 16 A continuous drain current. It has a maximum on-resistance of 360 mΩ at 10 V gate-source voltage and 8 A current, and is avalanche rated with 300 mJ energy capability. The gate charge is 29 nC, and the gate-source threshold voltage ranges from 3.0 to 5.0 V. Thermal resistance from junction to case is 0.50 °C/W. The device features a fast intrinsic rectifier, operates from -55°C to 150°C, and supports a transient gate-source voltage of ±40 V. It meets AEC-Q200 and RoHS standards, and is designed for switch-mode power supplies, DC-DC converters, and motor drives.
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
MOSFET, N-CH, 500V, 16A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.36ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFP16N50P3 | 02AC9817 |
| Product Name | 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | Mosfet, N-Ch, 500V, 16A, To-220Ab; Transistor Polarity Ixys Semiconductor |
| Polarity | N-Channel |
