Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
N-Channel MOSFET, 800V, 53A, 0.14ohm, 4-Pin Product overview: IXFN60N80P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800V, 53A, 0.14ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 53A, 0.14ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN60N80P can be used for catalog matching and distributor lookup.
MOSFET, N CHANNEL, 800V, 53A, SOT-227B; Transistor Polarity:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:53A; On Resistance Rds(on):0.14ohm; Transistor Mounting:Module; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN60N80P | 278-IXFN60N80P | 194350 | 58M7624 |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | N-Channel 800V 53A 0.14ohm MOSFET Transistor | MOSFETs | Mosfet, N Channel, 800V, 53A, Sot-227B; Transistor Polarity Ixys Semiconductor |
| Polarity | N-Channel | N-Channel | N-Channel | |
| Package Type | SOT-227 | Sot-227b | TO-3 | |
| MOSFET Operating Mode | Enhancement |
