Littelfuse, Inc. Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal... | |
| D-series IGBTs are NPT (Non-Punch Through) devices making them ideal for paralleling. They feature low switching losses with low tail current while providing short circuit capabilities. This D-series family also... | |
| Depletion Mode MOSFET DevicesOur N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process which realizes world-class, high voltage MOSFET performance in an economical silicon... | |
| Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and... | |
| Developed using our proprietary XPT™ thin-wafer technology and Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In... | |
| Developed using the charge compensation principle and proprietary process technology, these devices exhibit low on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances... | |
| Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability... | |
| IXFH40N80XA devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance... | |
| IXFH50N80XA devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance... | |
| Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low... | |
| Modules with fast, short circuit rated Trench igbts and fast switching SONIC free wheeling diodes | |
| Modules with rugged, short circuit rated XPT igbts and fast switching SONIC free wheeling diodes | |
| NPT IGBTs feature square RBSOA and 10 us short circuit withstand capability. They have positive temp coefficient of Vce(sat), ideal for paralleling. They are preferred for motor drive applications. These... | |
| Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon... | |
| Our Surface Mount Power Device (SMPD) packaging technology is an expansion of the ISOPLUS™ package portfolio to include modules that can be assembled in standard surface mount (SMD) soldering processes... | |
| Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift... | |
| Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ | |
| Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction,... | |
| The 450V S-Class Switchable Current Regulators are available in 2-100mA nominal current rating. They are available in TO-252 and TO-220 packages. These regulators feature 40W of continuous power dissipation. Their... | |
| The 600V X3-Class Ultra Junction MOSFET IXFA36N60X3 is available in 36A nominal current rating and TO-263(D2PAK) package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg. | |
| The 600V X3-Class Ultra Junction MOSFET IXFH36N60X3 is available in 36A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg. | |
| The 600V X3-Class Ultra Junction MOSFET IXFH48N60X3 is available in 48A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg. | |
| The 600V X3-Class Ultra Junction MOSFET IXFH60N60X3 is available in 60A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg. | |
| The 600V X3-Class Ultra Junction MOSFET IXFH78N60X3 is available in 78A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg. | |
| The 600V X3-Class Ultra Junction MOSFET IXFH98N60X3 is available in 98A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg. | |
| The 60V TrenchT3™ Power MOSFETs represent an expansion of the low-voltage Trench MOSFET product lines. With on-resistance as low as 3.1 milliohms, these devices are designed for high-power density, switched-mode... | |
| The 900V S-Class Switchable Current Regulators are available in 1-100mA nominal current rating. They are available in TO-252 and TO-220 packages. These regulators feature 40W of continuous power dissipation. These... | |
| The build in boost configuration offers a compact solution either in boost (PFC) or brake applications and in combination with buck series a solution for switched reluctance motor drives. | |
| The C044BG400 IGBT Gate Driver is a low power consumption driver with on board VCE desaturation detection for high reliability application. The driver features a fiber-optic communication interface for drive,... | |
| The IX4340NE is an automotive grade, AEC-Q100 qualified dual, high current, low side gate driver. Each of the two outputs is capable of sourcing and sinking 5A of peak current,... | |
| The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. | |
| The IXD0579M is a 100 V, high-speed gate driver that supports both high-side and low-side configurations, enabling the control of two N-channel MOSFETs or IGBTs in a half-bridge setup. The... | |
| The IXD2012NTR is a 200 V, high-speed gate driver with high-side and low-side outputs, designed to drive N-channel MOSFETs and IGBTs in a half-bridge configuration. The IXD2012NTR logic inputs are... | |
| The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. | |
| The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit... | |
| The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They... | |
| The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. | |
| These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these... | |
| These MOSFET drivers couple infrared light emitting diodes with proprietary photovoltaic integrated circuits. In addition to providing voltage for turn-on of discrete MOSFETs, these patented ICs feature a gate-clamping circuit... | |
| These Mosfets module series offers a SixPack configuration with fast swtching Trench Mosfets with low Rdson and rugged freewheeling body diode | |
| These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. | |
| This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 34A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance... | |
| This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 34A nominal current rating in TO-263 package. These Power MOSFETs feature significantly reduced channel resistance... | |
| This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 46A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance... | |
| This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 54A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance... | |
| This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 70A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance... | |
| This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 90A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance... | |
| Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating... | |
| Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. | |
| Ultrafast low-side SiC-MOSFET and IGBT driver with negative voltage charge pump | |
| With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH22N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body... | |
| With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH34N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body... | |
| With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH46N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body... | |
| With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH60N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body... | |
| With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH80N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body... |
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