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Littelfuse, Inc. Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name Notes
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal...
D-series IGBTs are NPT (Non-Punch Through) devices making them ideal for paralleling. They feature low switching losses with low tail current while providing short circuit capabilities. This D-series family also...
Depletion Mode MOSFET Devices Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process which realizes world-class, high voltage MOSFET performance in an economical...
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and...
Developed using our proprietary XPT™ thin-wafer technology and Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In...
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability...
IXFH40N80XA devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance...
IXFH50N80XA devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance...
Modules with built in fast, short circuit rated Trench igbts and fast switching SONIC free wheeling diodes for high commutation robustness in phase leg configuration such as motor drive inverters...
Modules with built in rugged, short circuit rated XPT igbts and fast switching SONIC free wheeling diodes for high commutation robustness in phase leg configuration designed for motor drive inverter.
NPT IGBTs feature square RBSOA and 10 us short circuit withstand capability. They have positive temp coefficient of Vce(sat), ideal for paralleling. They are preferred for motor drive applications. These...
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon...
Our Surface Mount Power Device (SMPD) packaging technology is an expansion of the ISOPLUS™ package portfolio to include modules that can be assembled in standard surface mount (SMD) soldering processes...
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift...
Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™
Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction,...
The 450V S-Class Switchable Current Regulators are available in 2-100mA nominal current rating. They are available in TO-252 and TO-220 packages. These regulators feature 40W of continuous power dissipation. Their...
The 600V X3-Class Ultra Junction MOSFET IXFA36N60X3 is available in 36A nominal current rating and TO-263(D2PAK) package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg.
The 600V X3-Class Ultra Junction MOSFET IXFH36N60X3 is available in 36A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg.
The 600V X3-Class Ultra Junction MOSFET IXFH48N60X3 is available in 48A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg.
The 600V X3-Class Ultra Junction MOSFET IXFH60N60X3 is available in 60A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg.
The 600V X3-Class Ultra Junction MOSFET IXFH78N60X3 is available in 78A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg.
The 600V X3-Class Ultra Junction MOSFET IXFH98N60X3 is available in 98A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg.
The 60V TrenchT3™ Power MOSFETs represent an expansion of the low-voltage Trench MOSFET product lines. With on-resistance as low as 3.1 milliohms, these devices are designed for high-power density, switched-mode...
The 650V X2-Class Ultra Junction MOSFETs are available in 26A nominal current rating. They are available in standard TO-247 package.These devices feature a unique gate charge compensation principle, resulting in...
The 650V X2-Class Ultra Junction MOSFETs are available in 26A nominal current rating. They are available in standard TO-263 package.These devices feature a unique gate charge compensation principle, resulting in...
The 900V S-Class Switchable Current Regulators are available in 1-100mA nominal current rating. They are available in TO-252 and TO-220 packages. These regulators feature 40W of continuous power dissipation. These...
The build in boost configuration offers a compact solution either in boost (PFC) or brake applications and in combination with buck series a solution for switched reluctance motor drives.
The C044BG400 IGBT Gate Driver is a low power consumption driver with on board VCE desaturation detection for high reliability application. The driver features a fiber-optic communication interface for drive,...
The IX4340NE is an automotive grade, AEC-Q100 qualified dual, high current, low side gate driver. Each of the two outputs is capable of sourcing and sinking 5A of peak current,...
The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses.
The IX4351NE is designed specifically to drive SiC-MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An...
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode.
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit...
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They...
The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency.
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these...
These MOSFET drivers couple infrared light emitting diodes with proprietary photovoltaic integrated circuits. In addition to providing voltage for turn-on of discrete MOSFETs, these patented ICs feature a gate-clamping circuit...
These Mosfets module series offers a SixPack configuration with fast swtching Trench Mosfets with low Rdson and rugged freewheeling body diode
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink.
This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 34A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance...
This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 34A nominal current rating in TO-263 package. These Power MOSFETs feature significantly reduced channel resistance...
This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 46A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance...
This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 54A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance...
This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 70A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance...
This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 90A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance...
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating...
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications.
With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH22N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body...
With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH34N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body...
With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH46N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body...
With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH60N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body...
With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH80N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body...

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