Littelfuse, Inc. Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name Notes
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal...
D-series IGBTs are NPT (Non-Punch Through) devices making them ideal for paralleling. They feature low switching losses with low tail current while providing short circuit capabilities. This D-series family also...
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and...
Developed using our proprietary XPT™ thin-wafer technology and Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In...
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability...
Features: 1.5A to 30A Peak Source/Sink Drive Current Wide Operating Voltage Range -40°C to +125°C Extended Operating Temperature Range Logic Input Withstands Negative Swing of up to 5V Matched Rise...
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low...
NPT IGBTs feature square RBSOA and 10 us short circuit withstand capability. They have positive temp coefficient of Vce(sat), ideal for paralleling. They are preferred for motor drive applications. These...
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon...
Our Surface Mount Power Device (SMPD) packaging technology is an expansion of the ISOPLUS™ package portfolio to include modules that can be assembled in standard surface mount (SMD) soldering processes...
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift...
Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™
The 450V S-Class Switchable Current Regulators are available in 2-100mA nominal current rating. They are available in TO-252 and TO-220 packages. These regulators feature 40W of continuous power dissipation. Their...
The 600V X3-Class Ultra Junction MOSFET IXFA36N60X3 is available in 36A nominal current rating and TO-263(D2PAK) package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg.
The 60V TrenchT3™ Power MOSFETs represent an expansion of the low-voltage Trench MOSFET product lines. With on-resistance as low as 3.1 milliohms, these devices are designed for high-power density, switched-mode...
The 650V X2-Class Ultra Junction MOSFETs are available in 26A nominal current rating. They are available in standard TO-263 package.These devices feature a unique gate charge compensation principle, resulting in...
The 900V S-Class Switchable Current Regulators are available in 1-100mA nominal current rating. They are available in TO-252 and TO-220 packages. These regulators feature 40W of continuous power dissipation. These...
The C044BG400 IGBT Gate Driver is a low power consumption driver with on board VCE desaturation detection for high reliability application. The driver features a fiber-optic communication interface for drive,...
The IX4340NE is an automotive grade, AEC-Q100 qualified dual, high current, low side gate driver. Each of the two outputs is capable of sourcing and sinking 5A of peak current,...
The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses.
The IX4351NE is designed specifically to drive SiC-MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An...
The IXDD604SI & SIA / IXDF604SI & SIA / IXDI604SI & SIA / IXDN604SI & SIA dual high-speed gate drivers are especially well suited for driving our latest MOSFETs and...
The IXDD609SI / IXDI609SI / IXDN609SI high-speed gate drivers are especially well suited for driving our latest MOSFETs and IGBTs. The IXD_609SI high-current output can source and sink 9A of...
The IXDD614SI / IXDI614SI / IXDN614SI high-speed gate drivers are especially well suited for driving our latest MOSFETs and IGBTs. The IXD_614SI high-current output can source and sink 14A of...
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode.
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit...
The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency.
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these...
These MOSFET drivers couple infrared light emitting diodes with proprietary photovoltaic integrated circuits. In addition to providing voltage for turn-on of discrete MOSFETs, these patented ICs feature a gate-clamping circuit...
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink.
This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 34A nominal current rating in TO-263 package. These Power MOSFETs feature significantly reduced channel resistance...
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating...
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications.

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