The IXTP18P10T is a P-channel enhancement mode power MOSFET in a TO-220 package, designed for high-side switching and applications such as DC choppers and battery chargers. It has a drain-source breakdown voltage of -100 V, a continuous drain current of -18 A at 25°C, and a maximum on-resistance of 120 mΩ at VGS = -10 V. The device is avalanche rated, features a fast intrinsic diode, and has a gate charge of 39 nC. Thermal resistance from junction to case is 1.5 °C/W. Operating junction temperature ranges from -55 °C to 150 °C. The TO-220 package weighs 3.00 g and has a mounting torque rating of 1.13 Nm.
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
MOSFET, P-CH, 100V, 18A, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTP18P10T | 03AH1650 |
| Product Name | -50V to -200V P-Channel Power MOSFETs | Mosfet, P-Ch, 100V, 18A, To-220; Channel Type Littelfuse |
| Polarity | P-Channel |
