Littelfuse, Inc. 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXTN400N15X4

Description
These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Low on-resistance RDS(ON) and gate charge Qg dv/dt ruggedness Avalanche capability International standard packages
Description
These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Low on-resistance RDS(ON) and gate charge Qg dv/dt ruggedness Avalanche capability International standard packages
Datasheet
Datasheet Summary
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The IXTN400N15X4 is an N-channel enhancement mode power MOSFET designed for high-current switching applications such as switch-mode power supplies, DC-DC converters, and motor drives. It is packaged in a miniBLOC (SOT-227) case weighing 30 g, with an isolation voltage of 2500 V~ RMS at 50/60 Hz for 1 minute. The device has a drain-source breakdown voltage of 150 V, a continuous drain current of 400 A at 25°C junction temperature, and a maximum on-state resistance of 2.35 mΩ at 10 V gate drive and 100 A drain current. It is avalanche rated with an energy rating of 3 J at 25°C, and features low gate charge and low package inductance. The maximum junction temperature is 175°C, and thermal resistance from junction to-case is 0.18°C/W. The device meets the miniBLOC industry standard and is rated for operation from -55°C to 175°C.

Datasheet Summary
Powered by GS/AI

The IXTN400N15X4 is an N-channel enhancement mode power MOSFET designed for high-current switching applications such as switch-mode power supplies, DC-DC converters, and motor drives. It is packaged in a miniBLOC (SOT-227) case weighing 30 g, with an isolation voltage of 2500 V~ RMS at 50/60 Hz for 1 minute. The device has a drain-source breakdown voltage of 150 V, a continuous drain current of 400 A at 25°C junction temperature, and a maximum on-state resistance of 2.35 mΩ at 10 V gate drive and 100 A drain current. It is avalanche rated with an energy rating of 3 J at 25°C, and features low gate charge and low package inductance. The maximum junction temperature is 175°C, and thermal resistance from junction to-case is 0.18°C/W. The device meets the miniBLOC industry standard and is rated for operation from -55°C to 175°C.

Suppliers

Company
Product
Description
Supplier Links
135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXTN400N15X4 - Littelfuse, Inc.
Rosemont, IL, United States
135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXTN400N15X4
135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXTN400N15X4
These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Low on-resistance RDS(ON) and gate charge Qg dv/dt ruggedness Avalanche capability International standard packages

These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Low on-resistance RDS(ON) and gate charge Qg dv/dt ruggedness Avalanche capability International standard packages

Supplier's Site Datasheet
Mosfet Mod, N-Ch, 150V, 400A, 830W; Channel Type Littelfuse - 80AH1991 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Mod, N-Ch, 150V, 400A, 830W; Channel Type Littelfuse
80AH1991
Mosfet Mod, N-Ch, 150V, 400A, 830W; Channel Type Littelfuse 80AH1991
MOSFET MOD, N-CH, 150V, 400A, 830W; Channel Type:N Channel; Continuous Drain Current Id:400A; Drain Source Voltage Vds:150V; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Power Dissipation:830W; Product Range:- RoHS Compliant: Yes

MOSFET MOD, N-CH, 150V, 400A, 830W; Channel Type:N Channel; Continuous Drain Current Id:400A; Drain Source Voltage Vds:150V; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Power Dissipation:830W; Product Range:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTN400N15X4 80AH1991
Product Name 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options Mosfet Mod, N-Ch, 150V, 400A, 830W; Channel Type Littelfuse
Polarity N-Channel
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