The IXFP90N20X3 is an N-channel enhancement mode MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-220AB case with a maximum drain-source voltage of 200V and a continuous drain current rating of 90A at 25°C. The on-resistance RDS(on) is specified at a maximum of 12.8mΩ at 10V gate bias and 45A drain current. The device is avalanche rated with an energy handling capability of 1.5J and features low gate charge (Qg = 78nC) and low package inductance. It supports a maximum junction temperature of 150°C and has a thermal resistance from junction to case of 0.32°C/W. The TO-220AB package has a weight of 3.0g. The device is rated for a transient gate-source voltage of ±30V and a continuous gate-source voltage of ±20V.
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
Power Field-Effect Transistor, Product overview: IXFP90N20X3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFP90N20X3 can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 200V, 90A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:90A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFP90N20X3 | 278-IXFP90N20X3 | 03AH0852 |
| Product Name | 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options | MOSFET Transistor | Mosfet, N-Ch, 200V, 90A, To-220Ab; Channel Type Littelfuse |
| Polarity | N-Channel |
