Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFB52N90P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFB52N90P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFB52N90P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFB52N90P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore
N-Channel 52A 900V 0.16ohm MOSFET Transistor
278-IXFB52N90P
N-Channel 52A 900V 0.16ohm MOSFET Transistor 278-IXFB52N90P
Power Field-Effect Transistor, 52A I(D), 900V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS264, 3 PIN Product overview: IXFB52N90P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 52A, 900V, 0.16ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 52A, 900V, 0.16ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFB52N90P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 52A I(D), 900V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS264, 3 PIN Product overview: IXFB52N90P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 52A, 900V, 0.16ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 52A, 900V, 0.16ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFB52N90P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
N Channel Polar Power Mosfet, Hiperfet, 900V, 52A, Plus264; Channel Type Ixys Semiconductor - 83R9966 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Polar Power Mosfet, Hiperfet, 900V, 52A, Plus264; Channel Type Ixys Semiconductor
83R9966
N Channel Polar Power Mosfet, Hiperfet, 900V, 52A, Plus264; Channel Type Ixys Semiconductor 83R9966
N CHANNEL POLAR POWER MOSFET, HiPerFET, 900V, 52A, PLUS264; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:52A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:1.25kW RoHS Compliant: Yes

N CHANNEL POLAR POWER MOSFET, HiPerFET, 900V, 52A, PLUS264; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:52A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:1.25kW RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET
Product Number IXFB52N90P 278-IXFB52N90P 83R9966
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 52A 900V 0.16ohm MOSFET Transistor N Channel Polar Power Mosfet, Hiperfet, 900V, 52A, Plus264; Channel Type Ixys Semiconductor
Polarity N-Channel N-Channel
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