Littelfuse, Inc. 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFB110N60P3

Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Datasheet
Datasheet Summary
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The IXFB110N60P3 is an N-channel enhancement mode Power MOSFET designed for high-speed switching applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a PLUS264 case, weighs 10 g, and features a drain-source breakdown voltage of 600 V, continuous drain current of 110 A at 25°C, and a maximum on-resistance of 56 mΩ at 10 V gate-source voltage. The device is avalanche rated with an energy rating of 3 J and has a fast intrinsic rectifier with a reverse recovery time of 250 ns. Thermal resistance is 0.066°C/W from junction to case and 0.13°C/W from case to heatsink. It meets AEC-Q200 qualifications and is RoHS compliant.

Datasheet Summary
Powered by GS/AI

The IXFB110N60P3 is an N-channel enhancement mode Power MOSFET designed for high-speed switching applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a PLUS264 case, weighs 10 g, and features a drain-source breakdown voltage of 600 V, continuous drain current of 110 A at 25°C, and a maximum on-resistance of 56 mΩ at 10 V gate-source voltage. The device is avalanche rated with an energy rating of 3 J and has a fast intrinsic rectifier with a reverse recovery time of 250 ns. Thermal resistance is 0.066°C/W from junction to case and 0.13°C/W from case to heatsink. It meets AEC-Q200 qualifications and is RoHS compliant.

Suppliers

Company
Product
Description
Supplier Links
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFB110N60P3 - Littelfuse, Inc.
Rosemont, IL, United States
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFB110N60P3
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFB110N60P3
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
MOSFETs - 8024344P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8024344P
MOSFETs 8024344P
MOSFET 600V 110A Polar3 HiPerFET PLUS264

MOSFET 600V 110A Polar3 HiPerFET PLUS264

Supplier's Site
MOSFETs - 8024344 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8024344
MOSFETs 8024344
MOSFET 600V 110A Polar3 HiPerFET PLUS264

MOSFET 600V 110A Polar3 HiPerFET PLUS264

Supplier's Site
MOSFETs - 1684726 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1684726
MOSFETs 1684726
MOSFET 600V 110A Polar3 HiPerFET PLUS264

MOSFET 600V 110A Polar3 HiPerFET PLUS264

Supplier's Site

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd. RS Components, Ltd.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFB110N60P3 8024344P 8024344
Product Name 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) MOSFETs MOSFETs
Polarity N-Channel N-Channel
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