The IXFP12N65X2 is an N-channel enhancement mode MOSFET rated for 650 V drain-source voltage and 12 A continuous drain current, designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-220 case, weighing 3.0 g, with a maximum junction temperature of 150°C and a power dissipation of 180 W at 25°C case temperature. The on-resistance RDS(on) is 310 mΩ at 10 V gate-source voltage and 6 A drain current. The device is avalanche rated and features low package inductance and easy mounting. Its gate threshold voltage ranges from 3.0 to 5.0 V, and it has a transient gate-source voltage rating of ±40 V.
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
MOSFET, N-CH, 650V, 12A, TO-220 ROHS COMPLIANT: YES
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFP12N65X2 | 71AH4553 |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode | Mosfet, N-Ch, 650V, 12A, To-220 Rohs Compliant Ixys Semiconductor |
| Polarity | N-Channel |
