Littelfuse, Inc. 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK120N30P3

Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Datasheet
Datasheet Summary
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The IXFK120N30P3 is an N-channel enhancement mode power MOSFET with a 300 V drain-source breakdown voltage and 120 A continuous drain current, designed for high-speed switching applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a TO-264 case, weighing 10 g, with a maximum junction temperature of 150°C and a mounting torque of 1.13 Nm. The device has a maximum on-resistance of 27 mΩ at 25°C and an avalanche energy rating of 3 J. It features a fast intrinsic diode with a reverse recovery time of 250 ns and is avalanche rated. The MOSFET meets RoHS standards and has low gate charge, low drain-to-tab capacitance, and low package inductance.

Datasheet Summary
Powered by GS/AI

The IXFK120N30P3 is an N-channel enhancement mode power MOSFET with a 300 V drain-source breakdown voltage and 120 A continuous drain current, designed for high-speed switching applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a TO-264 case, weighing 10 g, with a maximum junction temperature of 150°C and a mounting torque of 1.13 Nm. The device has a maximum on-resistance of 27 mΩ at 25°C and an avalanche energy rating of 3 J. It features a fast intrinsic diode with a reverse recovery time of 250 ns and is avalanche rated. The MOSFET meets RoHS standards and has low gate charge, low drain-to-tab capacitance, and low package inductance.

Suppliers

Company
Product
Description
Supplier Links
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK120N30P3 - Littelfuse, Inc.
Rosemont, IL, United States
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFK120N30P3
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK120N30P3
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
MOSFETs - 8024394 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8024394
MOSFETs 8024394
MOSFET N 300V 120A Polar3 HiPerFET TO264

MOSFET N 300V 120A Polar3 HiPerFET TO264

Supplier's Site
MOSFETs - 8024394P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8024394P
MOSFETs 8024394P
MOSFET N 300V 120A Polar3 HiPerFET TO264

MOSFET N 300V 120A Polar3 HiPerFET TO264

Supplier's Site
MOSFETs - 1461745 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1461745
MOSFETs 1461745
MOSFET N 300V 120A Polar3 HiPerFET TO264

MOSFET N 300V 120A Polar3 HiPerFET TO264

Supplier's Site

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd. RS Components, Ltd.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFK120N30P3 8024394 8024394P
Product Name 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) MOSFETs MOSFETs
Polarity N-Channel N-Channel
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