The IXFN210N30X3 is an N-channel enhancement mode MOSFET designed for high-power switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a miniBLOC (SOT-227) case, weighs 30 g, and features an aluminum nitride isolation base. The device has a drain-source voltage rating of 300 V, a continuous drain current of 210 A at 25°C, and a maximum on-resistance of 4.6 mΩ at 10 V gate-source voltage. It is avalanche rated with an energy rating of 3 J and supports a peak pulse current of 650 A. The thermal resistance from junction to case is 0.18 °C/W, and the case to heatsink thermal resistance is 0.05 °C/W. The device meets the miniBLOC international standard package and is rated for operation from -55 °C to +150 °C.
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
MOSFET MOD, N-CH, 300V, 210A, 695W; Channel Type:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:300V; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Power Dissipation:695W RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN210N30X3 | 03AH0731 |
| Product Name | 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options | Mosfet Mod, N-Ch, 300V, 210A, 695W; Channel Type Littelfuse |
| Polarity | N-Channel |
