The IXFH70N20Q3 is an N-channel enhancement-mode Power MOSFET for high-efficiency switching applications. Packaged in a TO-247 case weighing 6.0 g, it has a 200 V drain-to-source voltage rating and a continuous drain current of 70 A at 25°C. Its maximum on-state resistance is 40 mΩ at VGS = 10 V and ID = 35 A. A fast intrinsic rectifier provides a reverse recovery charge of 670 nC. The device is avalanche-rated with 1.5 J energy capability and operates up to a 150°C junction temperature. Thermal resistance from junction to case is 0.18°C/W. It supports a gate-source transient voltage of ±30 V and a mounting torque of 1.13 Nm. The package meets RoHS standards and features low gate resistance and low inductance.
The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device.Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings Low Rdson per silicon area Low Qg and Qgd Excellent dV/dt performance High Speed Switching Fast intrinsic Rectifier Low Intrinsic Gate Resistance High Avalanche Energy Capabilities Excellent Thermal Performance
Power Field-Effect Transistor, Product overview: IXFH70N20Q3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH70N20Q3 can be used for catalog matching and distributor lookup.
MOSFET N-Ch 200V 70A Q3 HiPerFET TO247
MOSFET N-Ch 200V 70A Q3 HiPerFET TO247
MOSFET N-Ch 200V 70A Q3 HiPerFET TO247
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFH70N20Q3 | 278-IXFH70N20Q3 | 8011392 | 8011392P |
| Product Name | 200V - 1100V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | MOSFET Transistor | MOSFETs | MOSFETs |
| Polarity | N-Channel | N-Channel |
