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Littelfuse, Inc. 200V - 1100V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH70N20Q3

Description
The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device.Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Features: Low Rdson per silicon area Low Qgand Qgd Excellent dV/dt performance High Speed Switching Fast intrinsic Rectifier Low Intrinsic Gate Resistance High Avalanche Energy Capabilities Excellent Thermal Performance Applications: Power Factor Correction Battery chargers Switched-mode and resonant-mode power supplies Server and Telecom Power Systems Arc Welding Plasma Cutting Induction Heating Solar Generation Systems Motor Controls Advantages: Easy to Mount High Power Density Space savings
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200V - 1100V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH70N20Q3 - Littelfuse, Inc.
Chicago, IL, United States
200V - 1100V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH70N20Q3
200V - 1100V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH70N20Q3
The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device.Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Features: Low Rdson per silicon area Low Qgand Qgd Excellent dV/dt performance High Speed Switching Fast intrinsic Rectifier Low Intrinsic Gate Resistance High Avalanche Energy Capabilities Excellent Thermal Performance Applications: Power Factor Correction Battery chargers Switched-mode and resonant-mode power supplies Server and Telecom Power Systems Arc Welding Plasma Cutting Induction Heating Solar Generation Systems Motor Controls Advantages: Easy to Mount High Power Density Space savings

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device.Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Features: Low Rdson per silicon area Low Qgand Qgd Excellent dV/dt performance High Speed Switching Fast intrinsic Rectifier Low Intrinsic Gate Resistance High Avalanche Energy Capabilities Excellent Thermal Performance Applications: Power Factor Correction Battery chargers Switched-mode and resonant-mode power supplies Server and Telecom Power Systems Arc Welding Plasma Cutting Induction Heating Solar Generation Systems Motor Controls Advantages: Easy to Mount High Power Density Space savings

Supplier's Site Datasheet
 - 8011392 - RS Components, Ltd.
Corby, Northants, United Kingdom
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode. Low RDS(on) and QG (gate charge). Low intrinsic gate resistance. Industry standard packages. Low package inductance. High power density Channel Type = N Maximum Continuous Drain Current = 70 A Maximum Drain Source Voltage = 200 V Maximum Drain Source Resistance = 40 mOhms Maximum Gate Threshold Voltage = 6.5V Maximum Gate Source Voltage = -20 V, +20 V Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Transistor Configuration = Single

The IXYS Q3 class of HiperFETâ„¢ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode. Low RDS(on) and QG (gate charge). Low intrinsic gate resistance. Industry standard packages. Low package inductance. High power density
Channel Type = N
Maximum Continuous Drain Current = 70 A
Maximum Drain Source Voltage = 200 V
Maximum Drain Source Resistance = 40 mOhms
Maximum Gate Threshold Voltage = 6.5V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-247
Mounting Type = Through Hole
Pin Count = 3
Transistor Configuration = Single

Supplier's Site
 - 8011392P - RS Components, Ltd.
Corby, Northants, United Kingdom
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode. Low RDS(on) and QG (gate charge). Low intrinsic gate resistance. Industry standard packages. Low package inductance. High power density Channel Type = N Maximum Continuous Drain Current = 70 A Maximum Drain Source Voltage = 200 V Maximum Drain Source Resistance = 40 mOhms Maximum Gate Threshold Voltage = 6.5V Maximum Gate Source Voltage = -20 V, +20 V Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Transistor Configuration = Single Delivery on production packaging - Tube. This product is non-returnable.

The IXYS Q3 class of HiperFETâ„¢ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode. Low RDS(on) and QG (gate charge). Low intrinsic gate resistance. Industry standard packages. Low package inductance. High power density
Channel Type = N
Maximum Continuous Drain Current = 70 A
Maximum Drain Source Voltage = 200 V
Maximum Drain Source Resistance = 40 mOhms
Maximum Gate Threshold Voltage = 6.5V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-247
Mounting Type = Through Hole
Pin Count = 3
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH70N20Q3 8011392
Product Name 200V - 1100V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
Polarity N-Channel N-Channel
V(BR)DSS 200 volts 200 volts
IDSS 70000 milliamps
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