Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH12N100P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFH12N100P is an N-channel enhancement mode MOSFET designed for high-power switching applications such as switch-mode power supplies, DC-DC converters, and motor drives. It is packaged in a TO-247 case with a drain tab, measuring 20.80 to 21.46 mm in length and 15.75 to 16.26 mm in width, and weighs 6 grams. The device has a drain-source breakdown voltage of 1000 V, a continuous drain current of 12 A at 25°C, and a maximum drain-source on-resistance of 1.05 Ω at VGS = 10 V. It features an avalanche energy rating of 750 mJ and a fast intrinsic rectifier with a reverse recovery time of 300 ns. The product meets AEC-Q200 and RoHS standards and has a maximum junction temperature of 150°C.

Datasheet Summary
Powered by GS/AI

The IXFH12N100P is an N-channel enhancement mode MOSFET designed for high-power switching applications such as switch-mode power supplies, DC-DC converters, and motor drives. It is packaged in a TO-247 case with a drain tab, measuring 20.80 to 21.46 mm in length and 15.75 to 16.26 mm in width, and weighs 6 grams. The device has a drain-source breakdown voltage of 1000 V, a continuous drain current of 12 A at 25°C, and a maximum drain-source on-resistance of 1.05 Ω at VGS = 10 V. It features an avalanche energy rating of 750 mJ and a fast intrinsic rectifier with a reverse recovery time of 300 ns. The product meets AEC-Q200 and RoHS standards and has a maximum junction temperature of 150°C.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH12N100P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH12N100P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH12N100P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 12A 1000V 1.05ohm MOSFET Transistor
278-IXFH12N100P
N-Channel 12A 1000V 1.05ohm MOSFET Transistor 278-IXFH12N100P
Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Product overview: IXFH12N100P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12A, 1000V, 1.05ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12A, 1000V, 1.05ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH12N100P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Product overview: IXFH12N100P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12A, 1000V, 1.05ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12A, 1000V, 1.05ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH12N100P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 1Kv, 12A, To-247 Rohs Compliant Ixys Semiconductor - 71AH4541 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1Kv, 12A, To-247 Rohs Compliant Ixys Semiconductor
71AH4541
Mosfet, N-Ch, 1Kv, 12A, To-247 Rohs Compliant Ixys Semiconductor 71AH4541
MOSFET, N-CH, 1KV, 12A, TO-247 ROHS COMPLIANT: YES

MOSFET, N-CH, 1KV, 12A, TO-247 ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH12N100P 278-IXFH12N100P 71AH4541
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 12A 1000V 1.05ohm MOSFET Transistor Mosfet, N-Ch, 1Kv, 12A, To-247 Rohs Compliant Ixys Semiconductor
Polarity N-Channel
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