Littelfuse, Inc. 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFH220N20X3

Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
Datasheet
Datasheet Summary
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The Littelfuse N-Channel MOSFET, part number 03AH0560, is rated for a maximum drain-source voltage (V_DSS) of 200V and a continuous drain current (I_D) of 220A. It features a low on-resistance (R_DS(on)) of 5.2 to 6.2 mOc at a gate-source voltage (V_GS) of 10V. The device is avalanche rated and operates effectively within a junction temperature range of -55¬8C to +150¬8C. It has a maximum power dissipation of 890W and is suitable for applications such as switch-mode power supplies, DC-DC converters, and motor drives. The MOSFET is available in multiple package options, including TO-247, TO-264, and TO-268HV, facilitating various mounting configurations. This product is RoHS compliant, ensuring it meets environmental standards.

Datasheet Summary
Powered by GS/AI

The Littelfuse N-Channel MOSFET, part number 03AH0560, is rated for a maximum drain-source voltage (V_DSS) of 200V and a continuous drain current (I_D) of 220A. It features a low on-resistance (R_DS(on)) of 5.2 to 6.2 mOc at a gate-source voltage (V_GS) of 10V. The device is avalanche rated and operates effectively within a junction temperature range of -55¬8C to +150¬8C. It has a maximum power dissipation of 890W and is suitable for applications such as switch-mode power supplies, DC-DC converters, and motor drives. The MOSFET is available in multiple package options, including TO-247, TO-264, and TO-268HV, facilitating various mounting configurations. This product is RoHS compliant, ensuring it meets environmental standards.

Suppliers

Company
Product
Description
Supplier Links
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFH220N20X3 - Littelfuse, Inc.
Rosemont, IL, United States
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFH220N20X3
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFH220N20X3
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Supplier's Site Datasheet
Mosfet, N-Ch, 200V, 220A, 150Deg C, 890W; Channel Type Littelfuse - 03AH0560 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 220A, 150Deg C, 890W; Channel Type Littelfuse
03AH0560
Mosfet, N-Ch, 200V, 220A, 150Deg C, 890W; Channel Type Littelfuse 03AH0560
MOSFET, N-CH, 200V, 220A, 150DEG C, 890W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:220A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 200V, 220A, 150DEG C, 890W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:220A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH220N20X3 03AH0560
Product Name 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options Mosfet, N-Ch, 200V, 220A, 150Deg C, 890W; Channel Type Littelfuse
Polarity N-Channel
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